A transparent layer of a LED device and the method for growing the same are disclosed in this present invention. This present invention provides an improved liquid phase epitaxy (LPE) process for growing a transparent layer of a LED device. In the above-mentioned LPE process, an improved supersaturated solution is utilized to overcome the shortcomings in the prior art, wherein the supersaturated solution comprises antimony and/or indium as a solvent. Furthermore, a metallic zinc and/or magnesium dopant is added into the supersaturated solution to optimize the characters of the transparent layer. Therefore, this invention can provide a more efficient method for growing a transparent layer of a LED device, and the quality of the above-mentioned transparent layer can thereby be improved.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for growing a transparent layer on a LED grown structure, comprising: providing a supersaturated solution, wherein said supersaturated solution comprises Sb as a solvent; immersing the LED grown structure into said supersaturated solution; and growing the transparent layer onto the LED grown structure.
2. The method according to claim 1 , wherein said supersaturated solution further comprises a metallic dopant.
3. The method according to claim 2 , wherein said metallic dopant comprises Zn.
4. The method according claim 3 , wherein said Zn is in an amount of {fraction (1/1000)} to {fraction (1/10)} by weight of the Sb.
5. The method according to claim 1 , wherein said step of immersing the LED grown structure into said supersaturated solution is performed under a temperature of about 500° C. to 1000° C.
6. A method for growing a transparent layer onto a LED grown structure, comprising: providing a supersaturated solution, wherein said supersaturated solution comprises Sb as a solvent; immersing the LED grown structure into said supersaturated solution; growing a first transparent layer onto the LED grown structure, wherein the first transparent layer has a first thickness; immersing the LED grown structure with the first transparent layer into said supersaturated solution; and growing a secondary transparent layer onto the first transparent layer on the LED grown structure, wherein the secondary transparent layer has a secondary thickness.
7. The method according to claim 6 , wherein said supersaturated solution further comprises a metallic dopant.
8. The structure according to claim 7 , wherein said metallic dopant comprises Zn.
9. The method according to claim 8 , wherein said Zn is in an amount of {fraction (1/1000)} to {fraction (1/10)} by weight of the Sb.
10. The method according to claim 6 , wherein said step of immersing the LED grown structure into said supersaturated solution is performed under a temperature of about 500° C. to 1000° C.
11. A method for growing a transparent layer onto a LED grown structure, comprising: providing a supersaturating solution, wherein said supersaturating solution comprises Sb and In as a solvent, GaP as a solute, and Zn as a dopant; immersing the LED grown structure into said supersaturated solution; and growing the transparent layer onto the LED grown structure.
12. The method according to claim 11 , wherein said Zn is in an amount of {fraction (1/1000)} to {fraction (1/10)} by weight of Sb of the supersaturated solution in the LPE process.
13. The method according to claim 11 , wherein said step of immersing the LED grown structure into said supersaturated solution is performed under a temperature of about 500° C. to 1000° C.
14. The method according to claim 11 , wherein said growing the transparent layer comprises the following steps: growing a first transparent layer onto the LED grown structure; immersing the LED grown structure with said first transparent layer into said supersaturated solution; and growing a secondary transparent layer onto said first transparent layer.
15. A method for growing a transparent layer on a LED grown structure, comprising: providing a supersaturated solution, wherein said supersaturated solution comprises In as a solvent; immersing the LED grown structure into said supersaturated solution; and growing the transparent layer onto the LED grown structure.
16. A method for growing a transparent layer on a LED grown structure, comprising: providing a supersaturated solution, wherein said supersaturated solution comprises Sb and In as a solvent; immersing the LED grown structure into said supersaturated solution; and growing the transparent layer onto the LED grown structure.
17. A method for growing a transparent layer onto a LED grown structure, comprising: providing a supersaturated solution, wherein said supersaturated solution comprises In as a solvent; immersing the LED grown structure into said supersaturated solution; growing a first transparent layer onto the LED grown structure, wherein the first transparent layer has a first thickness; immersing the LED grown structure with the first transparent layer into said supersaturated solution; and growing a secondary transparent layer onto the first transparent layer on the LED grown structure, wherein the secondary transparent layer has a secondary thickness.
18. A method for growing a transparent layer onto a LED grown structure, comprising: providing a supersaturated solution, wherein said supersaturated solution comprises Sb and In as a solvent; immersing the LED grown structure into said supersaturated solution; growing a first transparent layer onto the LED grown structure, wherein the first transparent layer has a first thickness; immersing the LED grown structure with the first transparent layer into said supersaturated solution; and growing a secondary transparent layer onto the first transparent layer on the LED grown structure, wherein the secondary transparent layer has a secondary thickness.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
June 25, 2002
May 10, 2005
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