A method of manufacturing a semiconductor device with the use of a laser crystallization method is provided which can prevent grain boundaries from being formed in a channel forming region of a TFT and which can avoid substantial reduction in TFT mobility, reduction in on current, and increase in off current due to the grain boundaries, and a semiconductor device manufactured by using the manufacturing method is also provided. Stripe shape or rectangular shape unevenness is formed only in a driver circuit. Continuous wave laser light is irradiated to a semiconductor film formed on an insulating film along the stripe unevenness of the insulating film or along a major axis or minor axis of the rectangular unevenness. Although it is most preferable to use the continuous wave laser light at this point, pulse wave laser light may also be used.
Legal claims defining the scope of protection, as filed with the USPTO.
Claim text for this patent isn't available yet.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
March 25, 2003
June 14, 2005
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.