A tip of a wire is bonded to a first electrode by using a tool. The wire is drawn from the first electrode to a bump on a second electrode. Apart of the wire is bonded to the center of the bump or a portion of the bump beyond the center in a drawing direction of the wire by using a part of the tool on a first electrode side in the drawing direction of the wire.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of manufacturing a semiconductor device, comprising: bonding a tip of a wire to a first electrode by using a tool; drawing the wire from the first electrode to a bump on a second electrode; bonding a part of the wire to a center of the bump or a portion of the bump beyond the center along a drawing direction of the wire by using a part of the tool on a first electrode side; and deforming only a partial width of the bump, the tool being moved on the bump in a width direction of the bump while the part of the wire is bonded.
2. The method of manufacturing a semiconductor device as defined by claim 1 , a part of the bump being deformed by the tool in bonding the part of the wire.
3. The method of manufacturing a semiconductor device as defined by claim 1 , the tool being moved on the bump in the drawing direction of the wire in bonding the part of the wire.
4. The method of manufacturing a semiconductor device as defined by claim 1 , bonding the part of the wire being performed while applying ultrasonic vibration to the bump.
5. The method of manufacturing a semiconductor device as defined by claim 1 , the tool having a hole into which the wire is inserted, and a bonding being performed by using a part of an open end of the tool on the first electrode side in bonding the part of the wire.
6. The method of manufacturing a semiconductor device as defined by claim 1 , before bonding the tip of the wire, further comprising: bonding a tip of a second wire formed in a shape of a ball to the second electrode; drawing a part of the second wire from the tip bonded to the second electrode; forming the bump on the second electrode by deforming the second wire at a portion continuous with the tip on the tip; and cutting the second wire leaving the bump on the second electrode.
7. The method of manufacturing a semiconductor device as defined by claim 6 , the top end of the bump being formed so that a height of the top end decreases in a direction toward an outside of the semiconductor device in forming the bump on the second electrode.
8. The method of manufacturing a semiconductor device as defined by claim 1 , deforming only the partial width of the bump so that the deformed partial width of the bump is not before a center line of the bump in the drawing direction of the wire.
9. A method of manufacturing a semiconductor device, comprising: bonding a tip of a wire to a first electrode by using a tool; drawing the wire from the first electrode to a bump on a second electrode; bonding a part of the wire to a center of the bump or a portion of the bump beyond the center along a drawing direction of the wire by using a part of the tool on a first electrode side; and deforming and pressing the wire over only a partial width of the bonding between the wire and the bump, the tool being moved on the bump in a width direction of the bump while the part of the wire is bonded.
10. The method of manufacturing a semiconductor device as defined by claim 9 , part of the bump being deformed by the tool in bonding the part of the wire.
11. The method of manufacturing a semiconductor device as defined by claim 9 , the tool being moved on the bump in the drawing direction of the wire in bonding the part of the wire.
12. The method of manufacturing a semiconductor device as defined by claim 9 , bonding the part of the wire being performed while applying ultrasonic vibration to the bump.
13. The method of manufacturing a semiconductor device as defined by claim 9 , the tool having a hole into which the wire is inserted, and a bonding being performed by using a part of an open end of the tool on the first electrode side in bonding the part of the wire.
14. The method of manufacturing a semiconductor device as defined by claim 9 , before bonding the tip of the wire, further comprising: bonding a tip of a second wire formed in a shape of a ball to the second electrode; drawing a part of the second wire from the tip bonded to the second electrode; forming the bump on the second electrode by deforming the second wire at a portion continuous with the tip on the tip; and cutting the second wire leaving the bump on the second electrode.
15. The method of manufacturing a semiconductor device as defined by claim 9 , the top end of the bump being formed so that a height of the top end decreases in a direction toward an outside of the semiconductor device in forming the bump on the second electrode.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
January 21, 2003
July 26, 2005
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.