An inertial sensor includes a single sense element disposed upon a silicon wafer. The sense element is electrically connected to a plurality of signal conditioning circuits that generate output signals in different ranges. Each signal conditioning circuit has an output that is electrically connected to an associated control device.
Legal claims defining the scope of protection, as filed with the USPTO.
1. An inertial sensor adapted to be attached to a body comprising: a base member, said base member being formed from a silicon wafer; a single angular rate sensor disposed on said base member, said angular rate sensor operable to sense a change in an angular velocity of said body; and a plurality of signal conditioning circuits connected to said angular rate sensor, with a first one of said signal conditioning circuits being calibrated to sense a first range of angular velocity change and a second one of said signal conditioning circuits being calibrated to sense a second range of angular velocity change, said second range of angular velocity change being different from said first range of angular velocity change, said signal conditioning circuits adapted to be connected to at least one control system, said signal conditioning circuits operable to generate an electrical signal that is a function of said change in said angular velocity of said body.
2. The inertial sensor according to claim 1 wherein said signal conditioning circuits are integral with said silicon wafer and said angular rate sensor.
3. The inertial sensor according to claim 2 including a device for combining signals connected to said signal conditioning circuits, said device operable to combine the signals generated by said plurality of signal conditioning circuits into a single output signal.
4. The inertial sensor according to claim 2 wherein said signal conditioning circuits are included within an Application Specific Integrated Circuit.
5. The inertial sensor according to claim 1 wherein said signal conditioning circuits are located remotely from said silicon wafer and said angular rate sensor.
6. The inertial sensor according to claim 5 wherein said signal conditioning circuits are included within an Application Specific Integrated Circuit.
7. The inertial sensor according to claim 5 including a device for combining signals connected to said signal conditioning circuits, said device operable to combine the signals generated by said plurality of signal conditioning circuits into a single output signal.
8. The inertial sensor according to claim 1 wherein said signal conditioning circuits are included within an Application Specific Integrated Circuit.
9. The inertial sensor according to claim 1 including a device for combining signals connected to said signal conditioning circuits, said device operable to combine the signals generated by said plurality of signal conditioning circuits into a single output signal.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
October 6, 2003
August 9, 2005
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