According to the semiconductor thin-film and semiconductor device manufacturing method of the present invention, an insulating film having a through-hole between two layers of silicon film is provided, the silicon film is partially melted by irradiating a laser thereon, and a substantially monocrystalline film is continuously formed extending via the through-hole from at least part of the layer of silicon film below the insulating film that continues to the through-hole, to at least part of the layer of silicon film above the insulating film. It is therefore sufficient to form a through-hole with a larger diameter than that of a hole formed by the conventional method, because the diameter of the through-hole in the insulating film may be the same size or slightly smaller than the size of a single crystal grain that comprises the polycrystal formed in the silicon film below the insulating film. Costly precision exposure devices and etching devices are therefore unnecessary. Numerous high-performance semiconductor devices can also be formed easily on a large glass substrate, as in large liquid-crystal displays and the like.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device, comprising: an insulating film having a through-hole, a diameter of the through-hole being, generally, equal to or smaller than a size of a single crystal grain of a silicon film located below the insulating film; and a substantially monocrystalline silicon film continuously formed inside the through-hole, in at least part of the layer below the insulating film extending into the through-hole, and in at least part of the layer above the insulating film extending into the through-hole, at least part of the layer below the insulating film and at least part of the layer above the insulating film being formed as substantially monocrystalline silicon films.
2. The semiconductor device according to claim 1 , the semiconductor device comprising a substantially polycrystalline silicon film as the layer below the insulating film; and the monocrystalline silicon film being continuously formed from at least part of the polycrystalline silicon film up to the through-hole and the layer above the insulating film.
3. The semiconductor device according to claim 1 , the semiconductor device comprising as the layer below the insulating film an insulating film having a concave portion in the part which continues into the through-hole; and the substantially monocrystalline silicon film being continuously formed from at least part of the concave portion up to the through-hole and the layer above the insulating film.
4. The semiconductor device according to claim 1 , the semiconductor device comprising a polycrystalline silicon film as the layer below the insulating film; and the substantially monocrystalline silicon film being continuously formed up to the layer above the insulating film, with a crystal grain contained in the polycrystalline silicon film as the nucleus thereof.
5. The semiconductor device according to claim 1 , the portion in the surface of the substantially monocrystalline silicon not containing the through-hole being used as a semiconductor thin film.
6. The semiconductor device according to claim 1 , a substantially monocrystalline silicon film that constitutes a semiconductor thin film being isolated from the through-hole.
7. An integrated circuit, comprising the semiconductor device according to claim 1 .
8. An electro-optical device, comprising the semiconductor device according to claim 1 .
9. An electronic appliance, comprising the semiconductor device according to claim 1 .
10. A semiconductor device comprising: a polycrystalline silicon film formed on a first insulating film; a second insulating film having a through-hole, formed on the polycrystalline silicon film; and a substantially monocrystalline silicon film formed on the second insulating film and contiguous with the polycrystalline silicon film via the through-hole, with crystal grains contained in the polycrystalline silicon film as nuclei thereof.
11. The semiconductor device according to claim 10 , the first insulating film and the second insulating film being silicon oxide films, and a silicon nitride film being further formed under the first insulating film.
12. The semiconductor device according to claim 10 , the portion in the surface of the substantially monocrystalline silicon not containing the through-hole being used as a semiconductor thin film.
13. The semiconductor device according to claim 10 , the substantially monocrystalline silicon film that constitutes a semiconductor thin film being isolated from the through-hole.
14. An integrated circuit, comprising the semiconductor device according to claim 13 .
15. An electro-optical device, comprising the semiconductor device according to claim 10 .
16. An electronic appliance, comprising the semiconductor device according to claim 10 .
17. A semiconductor device comprising: a first insulating film having a concave portion that contains substantially polycrystalline silicon; a second insulating film having a through-hole in a location continuing to the concave portion, formed on the first insulating film; and a substantially monocrystalline silicon film formed on the second insulating film and contiguous with the polycrystalline silicon film in the concave portion via the through-hole, with crystal grains contained in the polycrystalline silicon film as nuclei thereof.
18. The semiconductor device according to claim 17 , the first insulating film and the second insulating film being silicon oxide films, and a silicon nitride film being further formed under the first insulating film.
19. The semiconductor device according to claim 17 , the portion in the surface of the substantially monocrystalline silicon not containing the through-hole being used as a semiconductor thin film.
20. The semiconductor device according to claim 17 , the substantially monocrystalline silicon film that constitutes a semiconductor thin film being isolated from the through-hole.
21. An integrated circuit, comprising the semiconductor device according to claim 17 .
22. An electro-optical device, comprising the semiconductor device according to claim 17 .
23. An electronic appliance, comprising the semiconductor device according to claim 17 .
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
July 24, 2002
September 6, 2005
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