A method is described for forming an element of a microelectronic circuit. A sacrificial layer is formed on an upper surface of a support layer. The sacrificial layer is extremely thin and uniform. A height-defining layer is then formed on the sacrificial layer, whereafter the sacrificial layer is etched away so that a well-defined gap is left between an upper surface of the support layer and a lower surface of the height-defining layer. A monocrystalline semiconductor material is then selectively grown from a nucleation silicon site through the gap. The monocrystalline semiconductor material forms a monocrystalline layer having a thickness corresponding to the thickness of the original sacrificial layer.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of forming an element of a microelectronic circuit, comprising: forming a sacrificial layer having a lower surface on an upper surface of a support layer; forming a height-defining layer having a lower surface on an upper surface of the sacrificial layer; removing the sacrificial layer so that a gap is defined between the upper surface of the support layer and the lower surface of the height-defining layer; growing a monocrystalline semiconductor material from a nucleation site at least partially through the gap with a height of the semiconductor material being defined by a height of the gap; patterning the height-defining layer to form a spacer block on the monocrystalline semiconductor material; forming a spacer side wall on a side of the spacer block by depositing a conformal layer over the monocrystalline semiconductor material and a surface of the spacer block and etching the conformal layer back; removing the spacer block; and etching the monocrystalline semiconductor material with the spacer side wall serving as a mask, to form a wire element out of the monocrystalline semiconductor material.
2. The method of claim 1 , wherein the support layer is an insulator.
3. The method of claim 2 , further comprising: doping the wire element; and forming a conductive gate over and along opposing sides of the wire element.
4. The method of claim 1 , wherein the semiconductor material is at least one of silicon (Si), germanium (Ge), silicon germanium (Si x Ge y ), gallium arsenide (GaAs), InSb, GaP, GaSb and carbon.
5. The method of claim 1 , further comprising: forming the support layer over a portion of a semiconductor monocrystalline substrate, an open portion of the semiconductor monocrystalline substrate having the nucleation site.
6. A method of forming an element of a microelectronic circuit, comprising: forming a dielectric layer on a semiconductor monocrystalline substrate; forming a structure on the semiconductor monocrystalline substrate, having a height-defining layer, a gap being defined between an upper surface of the support layer and a lower surface of the height-defining layer; growing a monocrystalline semiconductor material from a nucleation site on the semiconductor monocrystalline substrate, the semiconductor material growing at least partially through the gap with a height of the semiconductor material being defined by a height of the gap; patterning the height-defining layer to form a spacer block on the monocrystalline semiconductor material; forming a spacer side wall on a side of the spacer block by depositing a conformal layer over the monocrystalline semiconductor material and a surface of the spacer block and etching the conformal layer back; removing the spacer block; and etching the monocrystalline semiconductor material with the spacer side wall serving as a mask, to form a wire element out of the monocrystalline semiconductor material.
7. The method of claim 6 , wherein the support layer is an insulator.
8. The method of claim 7 , further comprising: doping the wire element; and forming a conductive gate over and along opposing sides of the wire element.
9. A method of forming an element of a microelectronic circuit, comprising: forming an dielectric layer horizontally over a horizontal semiconductor monocrystalline substrate; forming a sacrificial layer having a horizontal lower surface on a horizontal upper surface of the dielectric layer, the sacrificial layer being of a different material than the dielectric layer; forming a height-defining layer having a lower surface on a horizontal upper surface of the sacrificial layer, the height-defining layer being of a different material than the sacrificial layer; removing the sacrificial layer with an etchant that selectively removes the material of the sacrificial layer over the materials of the dielectric layer and the height-defining layer, to leave a gap between the upper surface of the dielectric layer and the lower surface of the height-defining layer, the height-defining layer being maintained in a vertical position relative to the dielectric layer by a support piece on the semiconductor monocrystalline substrate; growing a monocrystalline semiconductor material from a nucleation site on the semiconductor monocrystalline substrate, the monocrystalline semiconductor material growing horizontally through the at least part of the gap to form a semiconductor layer with a vertical height thereof being limited by a vertical height of the gap; patterning the height-defining layer to form a spacer block on the monocrystalline semiconductor material; forming a spacer side wall on a side of the spacer block by depositing a conformal layer over the monocrystalline semiconductor material and a surface of the spacer block and etching the conformal layer back; removing the spacer block; and etching the monocrystalline semiconductor material with the spacer side wall serving as a mask, to form a wire element out of the monocrystalline semiconductor material.
10. The method of claim 9 , further comprising: doping the wire element; and forming a conductive gate over and along opposing sides of the wire element.
11. The method of claim 9 , wherein the semiconductor material grows vertically past the dielectric layer before growing horizontally into the gap.
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March 12, 2003
December 6, 2005
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