Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor device

1. A semiconductor device comprising an insulation film between semiconductor layers, the said insulation film, comprising borazine moieties shown by the following formula (1), (2), or (3) as part of an inorganic or organic material molecule, wherein said film has a dielectric constant of at most 2.4 and a thermal resistance of at least 450° C.

2. The semiconductor device of claim 1 , wherein said molecule contains at least one moiety selected from the following formulae (11)–(17):

3. The semiconductor device of claim 1 , wherein the inorganic material is selected from the group consisting of silicates, silazanes, silsequioxanes, siloxanes, and silanes, and the organic material is selected from the group consisting of poly(aryl ether), parylene, polyphenylene, polyphenylenevinylene, and polybenzocyclobutene.

4. A film comprising a material having the following formula (18): wherein n is an integer, and having a gold electrode deposited thereon, wherein said material may be partially crosslinked.

5. A film comprising poly(aminoborazinyl) having a gold electrode deposited thereon, wherein the poly(aminoborazinyl) is partially crosslinked.

6. A film comprising poly(B-vinylborazine), and having a gold electrode deposited thereon, wherein the poly(B-vinylborazine) is partially crosslinked.

7. A film comprising a poly(styrene-co-B-vinylborazine), and having a gold electrode deposited thereon, wherein the poly(styrene-co-B-vinylborazine) is partially crosslinked.