A semiconductor device which effectively reduces copper oxide layers on copper conductive lines is disclosed. The method includes forming a first insulating layer on a semiconductor substrate; forming a first conductive line by depositing a conductive material on the first insulating layer and selectively patterning the conductive material. A second insulating layer is deposited on top of the substrate including on the first conductive line. A via hole is formed by selectively patterning the second insulating layer to expose a certain portion of the first conductive line. A natural oxide layer is removed by plasma-processing the natural oxide layer using H2+CO gas.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of manufacturing a semiconductor device, comprising: forming a first insulating layer on a semiconductor substrate; forming a conductive line by depositing a conductive material on the first insulating layer and selectively patterning the conductive material; forming a second insulating layer by depositing an insulating material on top of the substrate including on the first conductive line; forming a via hole and a trench by selectively patterning the second insulating layer to expose a certain portion of the first conductive line; removing a natural oxide layer, formed on the first conductive line through natural oxidation of the first conductive line, by heat treating in an H 2 +CO gas atmosphere; forming a metal barrier by depositing a metal layer on top of the substrate including in the via hole and on the trench; forming a copper seed layer on top of the metal barrier; removing a natural copper oxide layer, formed on the copper seed layer through natural oxidation of the copper seed layer, by heat treating in an H 2 +CO gas atmosphere; depositing a conductive material for forming a conductive line on top of the substrate including on the metal barrier and the copper seed layer to sufficiently fill the via hole and the trench; forming a plug and a second conductive line by planarizing the conductive material on the second insulating layer in order to expose the second insulating layer; and removing a natural oxide layer, formed on the second conductive line through natural oxidation of the second conductive line, by heat treating in an H 2 +CO gas atmosphere.
2. The method of claim 1 , wherein the second conductive line is formed of copper.
3. The method of claim 1 , wherein the heat treatment is performed at room temperature to 200 C.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
December 12, 2003
May 2, 2006
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