According to the package and the method for manufacturing the package of the present invention, a chip can be formed extremely to be thin, and manufactured at lower cost and higher throughput, and the variations of a chip thickness can be reduced without back grind that causes cracks or polishing marks. In the present invention, a semiconductor film with a thickness of at most 500 μm deposited over a substrate serving as a support medium is crystallized with a CW laser light, and a chip having a semiconductor device is formed to have a total thickness of 5 μm, preferably at most 2 μm by using the crystallized semiconductor film. Consequently, the chip is mounted on an interposer after separating a substrate.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for manufacturing a semiconductor apparatus comprising the steps of: forming a semiconductor film over a first substrate; crystallizing the semiconductor film by irradiating the semiconductor film with overlapped beam spots of a first laser light and a second laser light to form a crystallized semiconductor film; forming a semiconductor device using the crystallized semiconductor film; bonding a second substrate over the semiconductor device; removing the first substrate from the semiconductor device; bonding an interposer to the semiconductor device; and removing the second substrate from the semiconductor device.
2. A method for manufacturing a semiconductor apparatus comprising the steps of: forming a semiconductor film over a first substrate; crystallizing the semiconductor film by irradiating the semiconductor film with overlapped beam spots of a first laser light and a second laser light to form a crystallized semiconductor film; forming a semiconductor device using the crystallized semiconductor film; bonding a second substrate over the semiconductor device; removing the first substrate from the semiconductor device; bonding an interposer to the semiconductor device; removing the second substrate from the semiconductor device; and electrically connecting the interposer and the semiconductor device.
3. A method for manufacturing a semiconductor apparatus comprising the steps of: forming a semiconductor film over a first substrate; crystallizing the semiconductor film by irradiating the semiconductor film with overlapped beam spots of a first laser light and a second laser light to form a crystallized semiconductor film; forming a semiconductor device using the crystallized semiconductor film; bonding a second substrate over the semiconductor device; removing the first substrate from the semiconductor device; electrically connecting an interposer to the semiconductor device; and removing the second substrate from the semiconductor device.
4. A method for manufacturing a semiconductor apparatus comprising the steps of: forming a semiconductor film over an obverse side of a first substrate; crystallizing the semiconductor film by irradiating the semiconductor film with overlapped beam spots of a first laser light and a second laser light to form a crystallized semiconductor film; forming a semiconductor device using the crystallized semiconductor film; bonding a second substrate over the semiconductor device; bonding a third substrate to a reverse side of the first substrate; removing the first substrate and the third substrate from the semiconductor device; bonding an interposer to the semiconductor device; removing the second substrate from the semiconductor device; and electrically connecting the interposer to the semiconductor device.
5. A method for manufacturing a semiconductor apparatus comprising the steps of: forming a semiconductor film over a first substrate; crystallizing the semiconductor film by irradiating the semiconductor film with overlapped beam spots of a first laser light and a second laser light to form a crystallized semiconductor film; forming a plurality of semiconductor devices using the crystallized semiconductor film; bonding a second substrate over the plurality of semiconductor devices; removing the first substrate from the plurality of semiconductor devices; cutting off a semiconductor device from the plurality of semiconductor devices by dicing the second substrate; bonding an interposer to the semiconductor device; and removing the second substrate from the semiconductor device.
6. A method for manufacturing a semiconductor apparatus comprising the steps of: forming a semiconductor film over a first substrate; crystallizing the semiconductor film by irradiating the semiconductor film with overlapped beam spots of a first laser light and a second laser light to form a crystallized semiconductor film; forming a plurality of semiconductor devices using the crystallized semiconductor film; bonding a second substrate over the plurality of semiconductor devices; removing the first substrate from the plurality of semiconductor devices; bonding an interposer to the plurality of semiconductor devices; cutting off a semiconductor device from the plurality of semiconductor devices by dicing the second substrate and the interposer; and removing the second substrate from the semiconductor device.
7. A method for manufacturing a semiconductor apparatus comprising the steps of: forming a semiconductor film over a first substrate; crystallizing the semiconductor film by irradiating the semiconductor film with overlapped beam spots of a first laser light and a second laser light to form a crystallized semiconductor film; forming a plurality of semiconductor devices using the crystallized semiconductor film; bonding a second substrate over the plurality of semiconductor devices; removing the first substrate from the plurality of semiconductor devices; bonding an interposer to the plurality of semiconductor devices; removing the second substrate from the plurality of semiconductor devices; and cutting off a semiconductor device from the plurality of semiconductor devices by dicing the interposer.
8. The method for manufacturing the semiconductor apparatus according to any one of claims 1 to 7 , wherein a metal film, a metal oxide film and an insulating film are formed between the first substrate and the semiconductor film.
9. The method for manufacturing the semiconductor apparatus according to any one of claims 1 to 7 , wherein the first laser light is a pulsed laser light and the second laser light is a CW laser light.
10. The method for manufacturing the semiconductor apparatus according to any one of claims 1 to 7 , wherein the first laser light has a wavelength having an absorbent coefficient of at least 1×10 4 cm −1 for the semiconductor film.
11. The method for manufacturing the semiconductor apparatus according to claim 8 , wherein the method further comprises a step of crystallizing the metal oxide film by heat-treating.
12. The method for manufacturing the semiconductor apparatus according to claim 8 , wherein the step of the forming the semiconductor device comprises a step of crystallizing the metal oxide film by heat-treating.
13. The method for manufacturing the semiconductor apparatus according to claim 8 , wherein the metal oxide film is formed by oxidizing a surface of the metal film.
14. The method for manufacturing the semiconductor apparatus according to any one of claims 1 to 7 , wherein the first laser light is a second harmonic laser light.
15. The method for manufacturing the semiconductor apparatus according to any one of claims 1 to 7 , wherein the second laser light is a fundamental wave laser light.
16. The method for manufacturing the semiconductor apparatus according to any one of claims 1 to 7 , wherein the beam spots of the first laser light and the second laser light are moved relatively to the semiconductor film, and the semiconductor device is formed so as to fit within a width of a beam spot of the second laser light in a vertical direction to a moving direction of the beam spots of the first laser light and the second laser light.
17. The method for manufacturing the semiconductor apparatus according to claim 16 , wherein the width of the beam spot of the second laser light is at least 10 mm and at most 50 mm.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
December 8, 2003
June 6, 2006
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