A surface emitting semiconductor laser includes a substrate, a laser portion having a first post construction that is provided on the substrate and has a contact region on a top surface thereof, and an electrode portion having a second post construction provided on the substrate. The electrode portion includes a conductive layer electrically connected to the contact region and extends therefrom.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A surface emitting semiconductor laser comprising: a substrate; a laser portion having a first post construction that is provided on the substrate and has a contact region on a top surface thereof; and an electrode portion having a second post construction provided on the substrate, the first post construction and the second post construction being isolated from each other; the electrode portion including a conductive layer electrically connected to the contact region and extends therefrom along side surfaces of the first post construction and the second post construction.
2. The surface emitting semiconductor laser as claimed in claim 1 , wherein: the first post construction includes first and second semiconductor reflection films provided on the substrate, and an active region interposed between the first and second semiconductor reflection films; and the second post construction includes a semiconductor layer having a layer structure identical to that of the first and second semiconductor reflection films and the active region.
3. The surface emitting semiconductor laser as claimed in claim 1 , wherein the second post construction is covered with an insulating film on which the conductive layer is provided on a top surface of the second post structure.
4. The surface emitting semiconductor laser as claimed in claim 3 , wherein the insulating film is provided on a contact layer on a top of the second post construction.
5. The surface emitting semiconductor laser as claimed in claim 1 , wherein: the laser portion includes a current confinement layer that is an oxidized semiconductor layer in the first post construction; and the electrode portion includes a semiconductor layer that is partially oxidized in the second post construction.
6. The surface emitting semiconductor laser as claimed in claim 1 , wherein the first and second post constructions have a mesa shape.
7. The surface emitting semiconductor laser as claimed in claim 1 , wherein the second post construction has a semiconductor layer that provides an electrode surface that is connected to a bonding wire or metal bump.
8. A surface emitting semiconductor laser comprising: a first multilayer reflection film, an oxidization control layer, an active layer and a second multilayer reflection film that are laminated; a laser portion that includes a first post construction formed by removing, in a periphery thereof, a range of at least the first multilayer reflection film to the oxidization control layer and has a first conduction type contact region formed on a top surface of the first multilayer reflection film; and an electrode portion that includes a second post construction formed by removing, in a periphery thereof, a range of at least the first multilayer reflection film to the oxidization control layer and has an electrode layer connected to the first conduction type contact region formed on the first multilayer reflection film via an insulating film, and extends therefrom along side surfaces of the first post construction and the second post construction, the first post construction and the second post construction being isolated from each other.
9. A surface emitting semiconductor laser comprising: a first multilayer reflection film, an oxidization control layer, an active layer and a second multilayer reflection film that are laminated; a laser portion that includes a first post construction formed by removing, in a periphery thereof, a range of at least the first multilayer reflection film to the oxidization control layer and has a first conduction type contact region formed on a top surface of the first multilayer reflection film; and an electrode portion that includes a second post construction formed by removing, in a periphery thereof, a range of at least the first multilayer reflection film to the oxidization control layer and has an electrode layer connected to the first conduction type contact region formed on the first multilayer reflection film via an insulating film, wherein the second post construction comprises multiple posts.
10. A surface emitting semiconductor laser comprising: a laser portion that is provided on a semiconductor substrate and has a first oxide region defined by selectively oxidizing part of a semiconductor layer containing aluminum; an electrode portion for supplying the laser portion with current; and a second oxide region defined by oxidizing another part of the semiconductor layer containing aluminum, the second oxide region being separate from the first oxide region, and the first oxide region being a current confinement portion, and the second oxide region being a stray capacitance reducing portion in the electrode portion.
11. The surface emitting semiconductor laser as claimed in claim 10 , wherein the electrode portion comprises an insulating layer provided above the first oxide region and a conductive layer formed on the insulating layer, the conductive layer providing an electrode surface.
12. The surface emitting semiconductor laser as claimed in claim 10 , wherein the electrode portion is spaced apart from the laser portion via a groove.
13. The surface emitting semiconductor laser as claimed in claim 11 , wherein the conductive layer comprises an electrode pad for wire bonding.
14. A surface emitting semiconductor laser comprising: a first multilayer reflection film, an oxidization control layer, an active layer and a second multilayer reflection film that are laminated; a laser portion that includes a first post construction formed by removing, in a periphery thereof, a range of at least the first multilayer reflection film to the oxidization control layer and has a first conduction type contact region formed on a top surface of the first multilayer reflection film; a first electrode portion that includes a second post construction formed by removing, in a periphery thereof, a range of at least the first multilayer reflection film to the oxidization control layer, the first electrode portion having an electrode layer provided on a top surface of the first multilayer reflection film via an insulation film and being connected to the first conduction type contact region; a second conduction type contact region formed on a side of the second multilayer reflection film; and a second electrode portion that includes a third construction formed by removing, in a periphery thereof, a range of at least the first multilayer reflection film to the oxidization control layer and has an electrode layer connected to the second conduction type contact region formed on the first multilayer reflection film via the insulating film and to the second conduction type contact region.
15. The surface emitting semiconductor laser as claimed in claim 14 , wherein at least one of the first and second electrode portions comprises multiple posts so as to divide the electrode layer into parts.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
February 28, 2003
June 6, 2006
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