A cooling device for an element such as a microprocessor in a computer, and a process for manufacturing the cooling device. The cooling device provides an effective structure of cooling a microprocessor by providing a metallic filler layer and a metal plate layer spreading out heat generated from the microprocessor, and thereby effectively thermally conducting heat away from the microprocessor. Further, a semiconductor thermoelectric module can be utilized to further cool the microprocessor.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A cooling device comprising: an element to be cooled and including a surface outputting heat; a first metallic filler layer configured to cover and to be in thermal conductive contact with an entire portion of said surface of said element outputting heat; a first metal plate covering and in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; a second metallic filler layer in thermal conductive contact with said first metal plate; and a semiconductor thermoelectric module in thermal conductive contact with said second metallic filler layer.
2. A cooling device according to claim 1 , further comprising: a third metallic filler layer in thermal conductive contact with said semiconductor thermoelectric module; and a second metal plate in thermal conductive contact with said third metallic filler layer.
3. A cooling device according to claim 2 , wherein said second and third metallic filler layers cover entire surfaces of said semiconductor thermoelectric module.
4. A cooling device according to claim 1 , wherein said element to be cooled is an integrated circuit chip.
5. A cooling device according to claim 2 , wherein said element to be cooled is an integrated circuit chip.
6. A cooling device comprising: an element to be cooled and including a surface outputting heat; a first metallic filler layer configured to cover and to be in thermal conductive contact with an entire portion of said surface of said element outputting heat; a first metal plate covering and in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; wherein said first metallic filler layer is formed of an alloy of: Sn 21.1%, Bi 50%, Pb 20.5%, and Cd 8.4%.
7. A cooling device according to claim 2 , wherein at least one of said first, second, and third metallic filler layers is formed of an alloy of: Sn 21.1%, Bi 50%, Pb 20.5%, and Cd 8.4%.
8. A cooling device comprising: an element to be cooled and including a surface outputting heat; a first metallic filler layer configured to cover and to be in thermal conductive contact with an entire portion of said surface of said element outputting heat; a first metal plate covering and in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; wherein said first metallic filler layer is formed of an alloy of: Sn 12.5%, Bi 50%, Pb 25%, and Cd 12.5%.
9. A cooling device according to claim 2 , wherein at least one of said first, second, and third metallic filler layers is formed of an alloy of: Sn 12.5%, Bi 50%, Pb 25%, and Cd 12.5%.
10. A cooling device comprising: an element to be cooled and including a surface outputting heat; a first metallic filler layer configured to cover and to be in thermal conductive contact with an entire portion of said surface of said element outputting heat; a first metal plate covering and in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; wherein said first metallic filler layer is formed of an alloy of: Sn 12.9%, Bi 49.4%, Pb 27.7%, and Cd 10%.
11. A cooling device according to claim 2 , wherein at least one of said first, second, and third metallic filler layers is formed of an alloy of: Sn 12.9%, Bi 49.4%, Pb 27.7%, and Cd 10%.
12. A cooling device according to claim 1 , wherein said first metal plate is formed of at least one of aluminum or copper.
13. A cooling device according to claim 2 , wherein at least one of said first and second metal plates is formed of at least one of aluminum or copper.
14. A cooling device according to claim 2 , wherein said semiconductor thermoelectric module is a Peltier element.
15. A cooling device according to claim 6 , wherein said element to be cooled is an integrated circuit chip.
16. A cooling device according to claim 7 , wherein said element to be cooled is an integrated circuit chip.
17. A cooling device according to claim 8 , wherein said element to be cooled is an integrated circuit chip.
18. A cooling device according to claim 9 , wherein said element to be cooled is an integrated circuit chip.
19. A cooling device according to claim 10 , wherein said element to be cooled is an integrated circuit chip.
20. A cooling device according to claim 11 , wherein said element to be cooled is an integrated circuit chip.
21. A process for manufacturing a cooling device comprising: providing an element to be cooled and including a surface outputting heat; providing a first metallic filler layer to cover and to be in thermal conductive contact with an entire portion of said surface of said element outputting heat; providing a first metal plate to cover and to be in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; providing a second metallic filler layer in thermal conductive contact with said first metal plate; and providing a semiconductor thermoelectric module in thermal conductive contact with said second metallic filler layer.
22. A process for manufacturing a cooling device according to claim 21 , further comprising: providing a third metallic filler layer in thermal conductive contact with said semiconductor thermoelectric module; and providing a second metal plate in thermal conductive contact with said third metallic filler layer.
23. A process for manufacturing a cooling device according to claim 22 , wherein said second and third metallic filler layers cover entire surfaces of said semiconductor thermoelectric module.
24. A process for manufacturing a cooling device according to claim 21 , wherein said element to be cooled is an integrated circuit chip.
25. A process for manufacturing a cooling device according to claim 22 , wherein said element to be cooled is an integrated circuit chip.
26. A process for manufacturing a cooling device comprising: providing an element to be cooled and including a surface outputting heat; providing a first metallic filler layer to cover and to be in thermal conductive contact with an entire portion of said surface of said element outputting heat; providing a first metal plate to cover and to be in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; wherein said first metallic filler layer is formed of an alloy of Sn 21.1%, Bi 50%, Pb 20.5%, and Cd 8.4%.
27. A process for manufacturing a cooling device according to claim 22 , wherein at least one of said first, second, and third metallic filler layers is formed of an alloy of Sn 21.1%, Bi 50%, Pb 20.5%, and Cd 8.4%.
28. A process for manufacturing a cooling device comprising: providing an element to be cooled and including a surface outputting heat; providing a first metallic filler layer to cover and to be in thermal conductive contact with an entire portion of said surface of said element outputting heat; providing a first metal plate to cover and to be in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; wherein said first metallic filler layer is formed of an alloy of Sn 12.5%, Bi 50%, Pb 25%, and Cd 12.5%.
29. A process for manufacturing a cooling device according to claim 22 , wherein at least one of said first, second, and third metallic filler layers is formed of an alloy of Sn 12.5%, Bi 50%, Pb 25%, and Cd 12.5%.
30. A process for manufacturing a cooling device comprising: providing an element to be cooled and including a surface outputting heat; providing a first metallic filler layer to cover and to be in thermal conductive contact with an entire portion of said surface of said element outputting heat; providing a first metal plate to cover and to be in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; wherein said first metallic filler layer is formed of an alloy of Sn 12.9%, Bi 49.4%, Pb 27.7%, and Cd 10%.
31. A process for manufacturing a cooling device according to claim 22 , wherein at least one of said first, second, and third metallic filler layers is formed of an alloy of Sn 12.9%, Bi 49.4%, Pb 27.7%, and Cd 10%.
32. A process for manufacturing a cooling device according to claim 21 , wherein said first metal plate is formed of at least one of aluminum or copper.
33. A process for manufacturing a cooling device according to claim 22 , wherein at least one of said first and second metal plates is formed of at least one of aluminum or copper.
34. A process for manufacturing a cooling device according to claim 22 , wherein said semiconductor thermoelectric module is a peltier element.
35. A process for manufacturing a cooling device according to claim 26 , wherein said element to be cooled is an integrated circuit chip.
36. A process for manufacturing a cooling device according to claim 27 , wherein said element to be cooled is an integrated circuit chip.
37. A process for manufacturing a cooling device according to claim 28 , wherein said element to be cooled is an integrated circuit chip.
38. A process for manufacturing a cooling device according to claim 29 , wherein said element to be cooled is an integrated circuit chip.
39. A process for manufacturing a cooling device according to claim 30 , wherein said element to be cooled is an integrated circuit chip.
40. A process for manufacturing a cooling device according to claim 31 , wherein said element to be cooled is an integrated circuit chip.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
August 13, 2004
June 27, 2006
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