Fuses for integrated circuits and semiconductor devices and methods for using the same. The semiconductor fuse contains two conductive layers, an overlying and underlying refractory metal nitride layer, on an insulating substrate. The semiconductor fuse may be fabricated during manufacture of a local interconnect structure including the same materials. The fuse, which may be used to program redundant circuitry, may be blown by electrical current rather than laser beams, thus allowing the fuse width to be smaller than prior art fuses blown by laser beams. The fuse may also be blown by less electrical current than the current required to blow conventional polysilicon fuses having similar dimensions.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of using a fuse in an integrated circuit, comprising: providing a fuse including a conductive layer overlying a refractory metal nitride layer disposed above an insulating substrate and having a neck portion extending between terminal portions, the neck portion having a width of about 0.35 micron; and applying electrical current between the terminal portions sufficient to blow the fuse by causing the neck portion of the fuse to melt and produce a leakage current of the blown fuse of about 1 nA.
2. The method of claim 1 , including providing the neck portion with a length of about 3.5 microns.
3. The method of claim 1 , including applying the electrical current within a range of about 1 to about 25 mA.
4. The method of claim 1 , including applying the electrical current of about 5.5 mA.
5. The method of claim 1 , wherein providing the fuse including the conductive layer comprises providing a fuse including a tungsten silicide layer.
6. The method of claim 1 , wherein providing the fuse including the conductive layer overlying a refractory metal nitride layer comprises providing a fuse including a conductive layer overlying a titanium nitride layer.
7. The method of claim 1 , wherein providing the fuse including the conductive layer comprises forming a tungsten silicide layer by chemical vapor deposition.
8. A method of using a fuse in an integrated circuit, comprising: providing a fuse including a conductive layer overlying a refractory metal nitride layer disposed above an insulating substrate and having a neck portion extending between terminal portions, the neck portion being smaller in width than the terminal portions; and applying electrical current within a range of about 1 to about 25 mA between the terminal portions sufficient to blow the fuse by causing the neck portion of the fuse to melt and produce a leakage current of the blown fuse of about 1 nA.
9. The method of claim 8 , wherein providing the fuse comprises providing the neck portion with a length of about 3.5 microns.
10. The method of claim 8 , wherein providing the fuse comprises providing the neck portion with a width of about 0.35 micron.
11. The method of claim 8 , wherein applying the electrical current comprises applying electrical current of about 5.5 mA.
12. The method of claim 8 , wherein providing the fuse including the conductive layer overlying the refractory metal nitride layer comprises providing a fuse including a tungsten silicide layer overlying the refractory metal nitride layer.
13. The method of claim 8 , wherein providing the fuse including the conductive layer overlying the refractory metal nitride layer comprises providing a fuse including a conductive layer overlying a titanium nitride layer.
14. The method of claim 8 , wherein providing the fuse including the conductive layer overlying the refractory metal nitride layer comprises forming a tungsten silicide layer by chemical vapor deposition over the refractory metal nitride layer.
15. A method of using a fuse in an integrated circuit, comprising: providing a fuse including a conductive layer overlying a refractory metal nitride layer disposed above an insulating substrate, the fuse including a neck portion extending between terminal portions, the neck portion having a first width smaller than a second width of the terminal portions; and melting the neck portion of the fuse by flowing electrical current between the terminal portions to produce a leakage current of the blown fuse of about 1 nA.
16. The method of claim 15 , wherein melting the neck portion comprises applying the electrical current within a range of about 1 to about 25 mA between the terminal portions.
17. The method of claim 15 , wherein melting the neck portion comprises applying the electrical current of about 5.5 mA between the terminal portions.
18. The method of claim 15 , wherein providing the fuse including the conductive layer overlying the refractory metal nitride layer comprises providing a fuse including a tungsten suicide layer overlying the refractory metal nitride layer.
19. The method of claim 15 , wherein providing the fuse including the conductive layer overlying the refractory metal nitride layer comprises providing a fuse including a conductive layer overlying a titanium nitride layer.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
May 4, 2004
September 19, 2006
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