It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.When a metal layer 11 is provided over a substrate, an oxide layer 12 is provided in contact with the metal layer 11, a layer to be peeled 13 is formed, and the metal layer 11 is irradiated with a laser beam to perform oxidization and form a metal oxide layer 16, a clear separation is possible with a physical means within the metal oxide layer 12 or at an interface between the metal oxide layer 16 and the oxide layer 12.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of manufacturing a semiconductor device, comprising: forming a metal layer in contact with a substrate; removing a portion of the metal layer which is in contact with a peripheral portion of the substrate; forming an oxide layer in contact with the metal layer, and a layer to be peeled including a semiconductor element over the oxide layer; bonding a support to the layer to be peeled; oxidizing the metal layer to form a metal oxide layer between the metal layer and the oxide layer after bonding the support to the layer to be peeled; and peeling the layer to be peeled that is bonded to the support from the substrate within the metal oxide layer, at an interface between the metal oxide layer and the oxide layer, or at an interface between the metal oxide layer and the metal layer after bonding the support to the layer to be peeled, wherein oxidizing the metal layer is conducted with irradiation of a laser beam.
2. A method of manufacturing a semiconductor device, comprising: forming an insulator layer on a substrate, a metal layer in contact with the insulator layer; removing a portion of the metal layer formed over a peripheral portion of the substrate; forming an oxide layer in contact with the metal layer, and a layer to be peeled including a semiconductor element above the oxide layer; bonding a support to the layer to be peeled; oxidizing the metal layer to form a metal oxide layer between the metal layer and the insulating layer, between the metal layer and the oxide layer, or both between the metal layer and the insulating layer and between the metal layer and the oxide layer after bonding the support to the layer to be peeled; and peeling the layer to be peeled that is bonded to the support from the substrate within the metal oxide layer in contact with the insulating layer, at an interface between the metal oxide layer in contact with the insulating layer and the insulating layer, at an interface between the metal oxide layer in contact with the insulating layer and the metal layer, within the metal oxide layer in contact with the oxide layer, at an interface between the metal oxide layer in contact with the oxide layer and the oxide layer, or at an interface between the metal oxide layer in contact with the oxide layer and the metal layer after bonding the support to the layer to be peeled, wherein oxidizing the metal layer is conducted with irradiation of a laser beam.
3. A method of manufacturing a semiconductor device, comprising: forming a metal layer in contact with a substrate; removing a portion of the metal layer which is in contact with a peripheral portion of the substrate; forming an oxide layer in contact with the metal layer, and a layer to be peeled including a semiconductor element over the oxide layer; bonding a support to the layer to be peeled; oxidizing the metal layer to form a metal oxide layer between the metal layer and the oxide layer after bonding the support to the layer to be peeled; and peeling the layer to be peeled that is bonded to the support from the substrate at a portion between the metal layer and the oxide layer, wherein oxidizing the metal layer is conducted with irradiation of a laser beam.
4. The method according to claim 1 , wherein oxidizing the metal film is conducted with heat treatment or compound treatment of irradiation of the laser beam and heat treatment.
5. The method according to claim 1 , wherein the laser beam is light emitted from a continuous wave oscillation or pulse oscillation solid laser.
6. The method according to claim 1 , wherein the metal layer is a single layer comprising an element selected from Ti, Ta, W, Mo, Cr, Nd, Fe, Ni, Go, Zr, and Zn, or one of an alloy material and a compound material including the element as its main component, or a lamination layer thereof.
7. The method according to claim 1 , wherein the oxide layer in contact with the metal layer is a silicon oxide film formed by sputtering.
8. The method according to claim 1 , wherein the substrate is a glass substrate or a quartz substrate, and the support is a plastic substrate or a plastic base material.
9. The method according to claim 1 , wherein the layer to be peeled includes a thin film transistor, a photoelectric conversion element comprising a PIN junction of silicon, an organic light-emitting element, an element comprising a liquid crystal, a memory element, a thin film diode, or a silicon resistor element.
10. The method according to claim 2 , wherein oxidizing the metal film is conducted with heat treatment or compound treatment of irradiation of the laser beam and heat treatment.
11. The method according to claim 2 , wherein the laser beam is light emitted from a continuous wave oscillation or pulse oscillation solid laser.
12. The method according to claim 2 , wherein the metal layer is a single layer comprising an element selected from Ti, Ta, W, Mo, Cr, Nd, Fe, Ni, Co, Zr, and Zn, or one of an alloy material and a compound material including the element as its main component, or a lamination layer thereof.
13. The method according to claim 2 , wherein the oxide layer in contact with the metal layer is a silicon oxide film formed by sputtering.
14. The method according to claim 2 , wherein the substrate is a glass substrate or a quartz substrate, and the support is a plastic substrate or a plastic base material.
15. The method according to claim 2 , wherein the layer to be peeled includes a thin film transistor, a photoelectric conversion element comprising a PIN junction of silicon, an organic light-emitting element, an element comprising a liquid crystal, a memory element, a thin film diode, or a silicon resistor element.
16. The method according to claim 3 , wherein oxidizing the metal film is conducted with heat treatment or compound treatment of irradiation of the laser beam and heat treatment.
17. The method according to claim 3 , wherein the laser beam is light emitted from a continuous wave oscillation or pulse oscillation solid laser.
18. The method according to claim 3 , wherein the metal layer is a single layer comprising an element selected from Ti, Ta, W, Mo, Cr, Nd, Fe, Ni, Co, Zr, and Zn, or one of an alloy material and a compound material including the element as its main component, or a lamination layer thereof.
19. The method according to claim 3 , wherein the oxide layer in contact with the metal layer is a silicon oxide film formed by sputtering.
20. The method according to claim 3 , wherein the substrate is a glass substrate or a quartz substrate, and the support is a plastic substrate or a plastic base material.
21. The method according to claim 3 , wherein the layer to be peeled includes a thin film transistor, a photoelectric conversion element comprising a PIN junction of silicon, an organic light-emitting element, an element comprising a liquid crystal, a memory element, a thin film diode, or a silicon resistor element.
22. A method of manufacturing a semiconductor device, comprising: forming a metal layer over a substrate; removing a portion of the metal layer formed over a peripheral portion of the substrate; forming an oxide layer on the metal layer, wherein a metal oxide layer is formed between the metal layer and the oxide layer; forming a layer to be peeled including a semiconductor element over the oxide layer; bonding a support to the layer to be peeled; irradiating the metal layer with a laser after bonding the support to the layer to be peeled; and peeling the layer to be peeled that is bonded to the support from the substrate at a portion between the metal layer and the oxide layer.
23. The method according to claim 22 , wherein the metal layer is a single layer comprising an element selected from Ti, Ta, W, Mo, Cr, Nd, Fe, Ni, Co, Zr, and Zn, or one of an alloy material and a compound material including the element as its main component, or a lamination layer thereof.
24. The method according to claim 22 , wherein the oxide layer in contact with the metal layer is a silicon oxide film formed by sputtering.
25. The method according to claim 22 , wherein the substrate is a glass substrate or a quartz substrate, and the support is a plastic substrate or a plastic base material.
26. The method according to claim 22 , wherein the layer to be peeled includes a thin film transistor, a photoelectric conversion element comprising a PIN junction of silicon, an organic light-emitting element, an element comprising a liquid crystal, a memory element, a thin film diode, or a silicon resistor element.
27. The method according to claim 22 , wherein the metal oxide layer is formed after forming the oxide layer.
28. The method according to claim 22 , wherein oxidizing the metal film is conducted with heat treatment or compound treatment of irradiation of the laser beam and heat treatment.
29. The method according to claim 22 , wherein the laser beam is light emitted from a continuous wave oscillation or pulse oscillation solid laser.
30. The method according to claim 1 , wherein the metal layer is formed between the oxide layer and the substrate.
31. The method according to claim 2 , wherein the metal layer is formed between the oxide layer and the substrate.
32. The method according to claim 3 , wherein the metal layer is formed between the oxide layer and the substrate.
33. The method according to claim 27 , wherein the metal layer is formed between the oxide layer and the substrate.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
October 29, 2003
March 13, 2007
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