Provided is a method for manufacturing a semiconductor device capable of preventing a solution from penetrating a lower layer by forming a poly silicon layer stacked of the films having the different grain boundary structures at border, wherein the solution is used in the subsequent strip and cleaning process.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for manufacturing a semiconductor device comprising: providing a semiconductor substrate on which elements are formed; forming a first layer on the semiconductor substrate; performing a nitrogen purge process to change the grain boundary structure of an upper surface of the first layer such that the first layer has a first grain boundary structure; and forming a second layer having a second grain boundary structure on the first layer, wherein the first layer and the second layer are formed by sequentially performing a pre-deposition step, a deposition step and a pumping step, and the first layer and the second layer have different grain boundary structures.
2. The method of claim 1 , wherein the first layer and the second layer comprise polysilicon.
3. The method of claim 1 , wherein the nitrogen purge process is performed in situ during the forming of the lower film layer.
4. The method of claim 1 , wherein the nitrogen purge process is performed with nitrogen gas at a pressure in the range of 0.1 Torr to 0.5 Torr and a temperature in the range of 580° C. to 650° C.
5. The method of claim 1 , wherein the film having at least a lower film layer and an upper film layer is formed through a deposition process, and said deposition process is performed with silane gas at a pressure in the range of 0.1 Torr to 0.5 Torr and a temperature in the range of 580° C. to 650° C.
6. A method for manufacturing a semiconductor device comprising: providing a semiconductor substrate on which elements are formed; forming a first polysilicon film on the semiconductor substrate by sequentially performing a first pre-deposition step, a first deposition step and a first pumping step; performing a first nitrogen purge process to change the grain boundary structure of an upper surface of the first polysilicon film such that the first layer has a first grain boundary structure; forming a second polysilicon film on the first polysilicon film by sequentially performing a second pre-deposition step, a second deposition step and a second pumping step; performing a second nitrogen purge process to change the grain boundary structure of an upper surface of the second polysilicon film such that the second polysilicon film has a second grain boundary structure; and forming a third polysilicon film having a third grain boundary structure on the second polysilicon film by sequentially performing a third pre-deposition step, a third deposition step and a third pumping step, wherein the first, second and third polysilicon films have different grain boundary structures.
7. The method of claim 6 , wherein the first and the second nitrogen purge process are performed with nitrogen gas at a pressure in the range of 0.1 Torr to 0.5 Torr and a temperature in the range of 580° C. to 650° C.
8. The method of claim 6 , wherein the first, the second and the third polysilicon film are formed through a deposition process, and said deposition process is performed with silane gas at a pressure in the range of 0.1 Torr to 0.5 Torr and a temperature in the range of 580° C. to 650° C.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
December 18, 2003
April 3, 2007
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