A method for simultaneously planarizing to relatively equal smoothness a thin film magnetic head hardbaked resist structure having relatively low surface energy and one or more additional thin film magnetic head structures containing other materials having comparatively higher surface energy, such as copper, hardbaked resist, alumina and NiFe. The method begins with preparation of a chemical mechanical polishing (CMP) slurry targeted at equaling the removal rate of the materials to be planarized. The CMP slurry includes a liquid vehicle, an abrasive, and a surfactant. The CMP slurry is applied to the surface of the structures to be planarized and the structures are simultaneously planarized using a CMP planarization technique.
Legal claims defining the scope of protection, as filed with the USPTO.
1. In a disk drive having a housing, a rotatable magnetic recording medium in the housing, an actuator carrying an actuator arm, a suspension, and a read/write head disposed in adjacent relationship with the recording medium, an improved magnetic write head having a hardbaked resist structure and one or more additional structures containing other materials having comparatively higher surface energy, said structures having a substantially even surface profile in which a surface height differential between said hardbaked resist structure and at least one of said one or more additional structures is less than 150 angstroms as a result of being simultaneously planarized according to a planarization process comprising: preparing a chemical mechanical polishing (CMP) sluny targeted at equaling the rate of removal of said hardbaked resist structure having relatively low surface energy and said one or more additional structures containing other materials of comparatively higher surface energy; said CMP slurry including a liquid vehicle containing an oxidant and a complexing agent, an abrasive, and a surfactant; and applying said CMP sluny to the surface of said structures and simultaneously planarizing said structures using a CMP planarization technique.
2. A disk drive in accordance with claim 1 wherein said other materials include copper, alumina and NiFe, and wherein said surface height differential of less than 150 angstroms is between said hardbaked resist structure and a structure comprising copper coil material.
3. A disk drive in accordance with claim 1 wherein said surfactant comprises a non-ionic surfactant.
4. A disk drive in accordance with claim 1 wherein said surfactant comprises octylphenoxypolyethoxyethanol.
5. A disk drive in accordance with claim 1 wherein said abrasive comprises silica.
6. A disk drive in accordance with claim 1 wherein said liquid vehicle comprises water, said oxidant and said complexing agent.
7. A disk drive in accordance with claim 1 wherein said oxidant comprises persulfate.
8. A disk drive in accordance with claim 1 wherein said complexing agent comprises ammonium.
9. A disk drive in accordance with claim 1 wherein said slurry comprises about 0.01–1.0% (by volume) of said surfactant.
10. A disk drive in accordance with claim 1 wherein said slurry comprises an aqueous liquid vehicle containing about 6–12% (by volume) of said abrasive, about 1.5–3 grams/liter ammonium persulfate, and about 0.02–1.0% (by volume) of said surfactant.
11. In a disk drive having a housing, a rotatable magnetic recording medium in the housing, an actuator carrying an actuator arm, a suspension, and a read/write head disposed in adjacent relationship with the recording medium, an improved magnetic write head having a hardbaked resist structure and one or more additional structures containing other materials having comparatively higher surface energy, said structures having a substantially even surface profile in which a surface height differential between said hardbaked resist structure and at least one of said one or more additional structures is less than 150 angstroms as a result of being simultaneously planarized according to a planarization process comprising: simultaneously planarizing said structures using a chemical mechanical polishing planarization technique and a CMP slurry targeted at equaling the rate of removal of said hardbaked resist structure having relatively low surface energy and said one or more additional structures containing other materials of comparatively higher surface energy; and said CMP slurry including a liquid vehicle, an abrasive, and a surfactant.
12. A disk drive in accordance with claim 11 wherein said other materials include copper, alumina and NiFe, and wherein said surface height differential of less than 150 angstroms is between said hardbaked resist structure and a structure comprising copper coil material.
13. A disk drive in accordance with claim 11 wherein said surfactant comprises a non-ionic surfactant.
14. A disk drive in accordance with claim 11 wherein said surfactant comprises octylphenoxypolyethoxyethanol.
15. A disk drive in accordance with claim 11 wherein said liquid vehicle comprises water, said oxidant and said complexing agent.
16. A disk drive in accordance with claim 11 wherein said oxidant comprises persulfate.
17. A disk drive in accordance with claim 11 wherein said complexing agent comprises ammonium.
18. A disk drive in accordance with claim 11 wherein said slurry comprises about 0.01–1.0% (by volume) of said surfactant.
19. A disk drive in accordance with claim 11 wherein said slurry comprises an aqueous liquid vehicle containing about 6–12% (by volume) of said abrasive, about 1.5–3 grams/liter ammonium persulfate diluted in water, and about 0.02–1.0% (by volume) of said surfactant.
20. In a disk drive having a housing, a rotatable magnetic recording medium in the housing, an actuator carrying an actuator arm, a suspension, and a read/write head disposed in adjacent relationship with the recording medium, an improved magnetic write head having a hardbaked resist structure and one or more additional structures containing other materials having comparatively higher surface energy, said structures having a substantially even surface profile in which a surface height differential between said hardbaked resist structure and at least one of said one or more additional structures is approximately zero angstroms as a result of being simultaneously planarized according to a planarization process comprising: simultaneously planarizing said structures using a chemical mechanical polishing planarization technique and a CMP slurry targeted at equaling the rate of removal of said hardbaked resist structure having relatively low surface energy and said one or more additional structures containing other materials of comparatively higher surface energy; and said CMP slurry including a liquid vehicle, an abrasive, and a surfactant.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
December 20, 2005
April 10, 2007
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