Patentable/Patents/US-7203038
US-7203038

GMR enhancing seedlayer for self pinned spin valves

PublishedApril 10, 2007
Assigneenot available in USPTO data we have
Inventorsnot available in USPTO data we have
Technical Abstract

A magnetic head includes a seed layer structure comprising Al2O3, Ta, and NiFeCr seed layers. An antiparallel (AP) pinned layer structure is formed above the NiFeCr seed layer. A free layer is positioned above the AP pinned layer structure.

Patent Claims
19 claims

Legal claims defining the scope of protection, as filed with the USPTO.

1

1. A magnetic head, comprising: a seed layer structure comprising Al 2 O 3 , Ta, and NiFeCr seed layers; an antiparallel (AP) pinned layer structure formed above the NiFeCr seed layer, with the proviso that no antiferromagnetic layer is positioned between the AP pinned layer structure and the seed layers; and a free layer positioned above the AP pinned layer structure.

2

2. A head as recited in claim 1 , wherein the AP pinned layer structure includes at least two pinned layers having magnetic moments that are self-pinned antiparallel to each other, the pinned layers being separated by an AP coupling layer, wherein the AP pinned layers are constructed of a material selected from a group consisting of CoFe, Co, and combinations thereof.

3

3. A head as recited in claim 2 , wherein the AP pinned layers are both constructed of Co.

4

4. A head as recited in claim 2 , wherein the AP pinned layers are both constructed of CoFe.

5

5. A head as recited in claim 1 , wherein a thickness of the NiFeCr seed layer is selected to maximize a GMR signal of the resultant head.

6

6. A head as recited in claim 1 , wherein a thickness of the NifeCr seed layer is selected to maximize a magnetostriction of the resultant head.

7

7. A head as recited in claim 1 , wherein a thickness of the NiFeCr seed layer is in a range of about 15 Å to about 50 Å.

8

8. A head as recited in claim 1 , wherein the head has at least a 10% stronger GMR signal over a head having a substantially similar structure except for the seed layers.

9

9. A head as recited in claim 1 , wherein the head forms part of a GMR head.

10

10. A head as recited in claim 1 , wherein the head forms part of a GMR sensor.

11

11. A magnetic storage system, comprising: magnetic media; at least one head for reading from and writing to the magnetic media, each head having: the structure recited in claim 1 ; a write element coupled to the structure; a slider for supporting the head; and a control unit coupled to the head for controlling operation of the head.

12

12. A magnetic head, comprising: an antiparallel (AP) pinned layer structure formed above an NiFeCr seed layer, with the proviso that no antiferromagnetic layer is positioned between the AP pinned layer structure and the seed layers; and a free layer positioned above the AP pinned layer structure, wherein the AP pinned layer structure includes at least two pinned layers having magnetic moments that are self-pinned antiparallel to each other, the pinned layers being separated by an AP coupling layer, wherein the AP pinned layers are constructed of a material selected from a group consisting of CoFe, Co, and combinations thereof, wherein one of the AP pinned layers is constructed primarily of Co and another of the AP pinned layers is constructed primarily of CoFe.

13

13. A head as recited in claim 12 , wherein the AP pinned layer closest to the seed layer structure is constructed primarily of CoFe.

14

14. A head as recited in claim 12 , wherein the head has at least a 10% stronger GMR signal over a head having a substantially similar structure except for materials used to form the pinned layers.

15

15. A magnetic head, comprising: a seed layer structure comprising Al 2 O 3 . Ta, and NiFeCr seed layers; an antiparallel (AP) pinned layer structure formed directly on the NiFeCr seed layer, wherein cad of the AP pinned layers is constructed of a material selected from a group consisting of CoFe, Co, and combinations thereof, with the proviso that no antiferromagnetic layer is positioned between the AP pinned layer structure and the seed layers; and a free layer positioned above the AP pinned layer structure.

16

16. A head as recited in claim 15 , wherein the head has at least a 10% stronger GMR signal over a head having a substantially similar structure except for the seed layers.

17

17. A head as recited in claim 15 , wherein the head has at least a 10% stronger GMR signal over a head having a substantially similar structure except for materials used to form the pinned layers.

18

18. A head as recited in claim 15 , wherein the head forms part of a GMR head.

19

19. A magnetic storage system, comprising: magnetic media: at least one head for reading from and writing to the magnetic media, each head having: the structure recited in claim 15 ; a write element coupled to the structure; a slider for supporting the head; and a control unit coupled to the head for controlling operation of the head.

Classification Codes (CPC)

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Patent Metadata

Filing Date

August 10, 2005

Publication Date

April 10, 2007

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Cite as: Patentable. “GMR enhancing seedlayer for self pinned spin valves” (US-7203038). https://patentable.app/patents/US-7203038

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