A chemical-mechanical polishing (CMP) process for the manufacturing of semiconductor devices is disclosed. The process includes removing a first portion of a first layer of interconnect materials using a first platen and a first slurry, removing a second portion of the first layer using a second platen and a second slurry, removing a first portion of a second layer of the interconnect materials using a second platen and a third slurry, and removing a second portion of the second layer using a third platen and a fourth slurry.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for forming an interconnect structure of a semiconductor device utilizing a chemical-mechanical polishing (CMP) processing, comprising: removing a first portion of a first layer of interconnect materials using a first platen and a first slurry; removing a second portion of the first layer using a second platen and a second slurry; removing a first portion of a second layer of the interconnect materials using a second platen and a third slurry; and removing a second portion of the second layer using a third platen and a fourth slurry.
2. The method of claim 1 wherein the first layer comprises a conductive layer.
3. The method of claim 1 wherein the first layer comprises copper (Cu).
4. The method of claim 1 wherein the second layer comprises a barrier layer.
5. The method of claim 1 wherein the second layer comprises tantalum (Ta).
6. The method of claim 1 wherein the thickness of the first portion of the second layer is approximately 10 Angstroms.
7. The method of claim 1 wherein the thickness of the first portion of the second layer is approximately 300 Angstroms.
8. The method of claim 1 wherein the thickness of the first portion of the second layer is between approximately 10 Angstroms to approximately 300 Angstroms.
9. The method of claim 1 wherein removing a first portion of a second layer of the interconnect materials comprises a slower polishing operation than removing a second portion of the first layer.
10. The method of claim 9 wherein the slower polishing operation utilizes a polishing pressure of between about 0.2 psi to about 8 psi.
11. The method of claim 1 wherein the second slurry comprises silica.
12. The method of claim 1 wherein the third slurry comprises alumina.
13. The method of claim 9 wherein the slower polishing operation utilizes a lower platen rotation speed and a lower slurry dispensing speed.
14. The method of claim 1 wherein the fourth slurry comprises silica.
15. A method for forming an interconnect structure of a semiconductor device using a multi-platen chemical mechanical polishing (CMP) process, comprising: removing a first portion of a copper (Cu) layer of interconnect materials using a first platen and a first slurry; removing a second portion of the Cu layer using a second platen and a second slurry; removing a first portion of a tantalum (Ta) layer of the interconnect materials using a second platen and a third slurry, wherein the thickness of the first portion is between approximately 10 Angstroms to approximately 300 Angstroms; and removing a second portion of the Ta layer using a third platen and a fourth slurry.
16. The method of claim 15 wherein removing a first portion of a tantalum layer of the interconnect materials comprises a slower polishing operation than removing a second portion of the Cu layer.
17. The method of claim 16 wherein the slower polishing operation utilizes a polishing pressure of between about 0.2 psi to about 8 psi.
18. The method of claim 15 wherein the first slurry comprises silica.
19. The method of claim 15 wherein the second slurry comprises alumina.
20. A method for forming an interconnect structure of a semiconductor device utilizing a chemical-mechanical polishing (CMP) processing, comprising: removing a first portion of a first layer of interconnect materials using a first platen and a first slurry; removing a second portion of the first layer using a second platen and a second slurry; removing a first portion of a second layer of the interconnect materials using a second platen and a third slurry; and removing a second portion of the second layer using a third platen and the third slurry.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
October 12, 2004
June 19, 2007
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