On an SOI substrate, a hydrogen ion implantation section in which distribution of hydrogen ions peaks in a BOX layer (buried oxide film layer), and a single-crystal silicon thin-film transistor are formed. Then this SOI substrate is bonded with an insulating substrate. Subsequently, the SOI substrate is cleaved at the hydrogen ion implantation section by carrying out heat treatment, so that an unnecessary part of the SOI substrate is removed, Furthermore, the BOX layer remaining on the single-crystal silicon thin-film transistor is removed by etching. With this, it is possible to from a single-crystal silicon thin-film device on an insulating substrate, without using an adhesive. Moreover, it is possible to provide a semiconductor device which has no surface damage and includes a single-crystal silicon thin film which is thin and uniform in thickness.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device, comprising: an insulating substrate having a surface on which a first SiO 2 film is formed; a single-crystal silicon thin film having bonded thereto a second SiO 2 film, which single-crystal silicon thin film is bonded with the insulating substrate on a partial region of the insulating substrate via the first and second SiO 2 films; and a non-single-crystal silicon thin film comprising an active area of a transistor and formed on the insulating substrate in a region where the single-crystal silicon thin film is not bonded with the insulating substrate, which non-single-crystal silicon thin film is formed on the insulating substrate via the first SiO 2 film and a third SiO 2 film, wherein the second SiO 2 film and the third SiO 2 film are of different thicknesses.
2. The semiconductor device as defined in claim 1 , wherein the single-crystal silicon thin film has a thickness of not more than about 70 nm.
3. The semiconductor device as defined in claim 1 , wherein the single-crystal silicon thin film has a thickness of not more than about 20 nm.
4. The semiconductor device as defined in claim 1 , wherein the non-single-crystal silicon thin film comprises polycrystalline silicon.
5. The semiconductor device as defined in claim 1 , wherein the non-single-crystal silicon thin film comprises continuous grain silicon.
6. The semiconductor device as defined in claim 1 , wherein the non-single-crystal silicon thin film comprises amorphous silicon.
7. The semiconductor device as defined in claim 6 , wherein a non-single crystal silicon thin-film transistor, which includes a gate insulating film made up of at least one insulating film including silicon nitride, is formed using the amorphous silicon thin film.
8. The semiconductor device as defined in claim 1 , wherein the insulating substrate comprises a high strain point glass including an alkaline-earth alumino-borosilicate glass.
9. The semiconductor device as defined in claim 1 , wherein the insulating substrate comprises any one of a barium borosilicate glass, a barium alumino-borosilicate glass, an alkaline-earth alumino-borosilicate glass, a borosilicate glass, an alkaline-earth-zinc-lead-alumino-borosilicate glass, and an alkaline-earth-lead-alumino-borosilicate glass.
10. The semiconductor device as defined in claim 1 , wherein a difference of linear expansion between the insulating substrate and the single-crystal silicon thin film is about not more than 250 ppm at temperatures in a range between substantially room temperature and 600° C.
11. The semiconductor device as defined in claim 1 , wherein the insulating substrate comprises a high strain point glass whose strain point is not less than 500° C.
12. The semiconductor device as claimed in claim 1 , wherein the non-single-crystal silicon thin film is not formed on the insulating substrate via the second SiO 2 film.
13. The semiconductor device as claimed in claim 1 , wherein the second SiO 2 film is provided in an area corresponding to an area of the single-crystal silicon thin film.
14. A semiconductor device, comprising: an insulating substrate having a surface on which a first SiO 2 film is formed; a single-crystal silicon thin film having bonded thereto a second SiO 2 film, which single-crystal silicon thin film is bonded with the insulating substrate on a partial region of the insulating substrate via the first and second SiO 2 films; and a non-single-crystal silicon thin film formed on the insulating substrate in a region where the single-crystal silicon thin film is not bonded with the insulating substrate, which non-single-crystal silicon thin film is formed on the insulating substrate via the first SiO 2 film and a third SiO 2 film, wherein the second SiO 2 film and the third SiO 2 film are of different thicknesses, and wherein a transistor formed using the single-crystal silicon thin film is arranged such that, from an insulating substrate side, a gate electrode, a gate insulating film, and the single-crystal silicon thin film are formed in this order.
15. The semiconductor device as defined in claim 14 , wherein at least a part of the transistor formed using the single-crystal silicon thin film includes an interlayer insulating film and metal interconnects provided further on the single-crystal silicon thin film.
16. The semiconductor device as defined in claim 14 , wherein the transistor formed using the single-crystal silicon thin film is arranged such that, from an insulating substrate side, an interlayer insulating film, a metal interconnects layer, an interlayer insulating film, a gate electrode, a gate insulating film, and the single-crystal silicon thin film are formed in this order, and in at least a part of the transistor, an interlayer insulating film and metal interconnects are further provided on the single-crystal silicon thin film.
17. A semiconductor device, comprising: an insulating substrate having a surface on which a first SiO 2 film is formed; a single-crystal silicon thin film having bonded thereto a second SiO 2 film, which single-crystal silicon thin film is bonded to the insulating substrate via the first and second SiO 2 films, the single-crystal silicon thin film having a substantially uniform thickness and a substantially damage-free surface; and a non-single-crystal silicon thin film comprising an active area of a transistor and formed on the insulating substrate in a region where the single-crystal silicon thin film is not bonded with the insulating substrate, which non-single-crystal silicon thin film is formed on the insulating substrate via the first SiO 2 film and a third SiO 2 film, wherein the second SiO 2 film and the third SiO 2 film are of different thicknesses.
18. The semiconductor device as defined in claim 17 , further comprising: transistor elements formed from the single-crystal silicon thin film.
19. The semiconductor device as claimed in claim 17 , wherein the non-single-crystal silicon thin film is not formed on the insulating substrate via the second SiO 2 film.
20. The semiconductor device as claimed in claim 17 , wherein the second SiO 2 film is provided in an area corresponding to an area of the single-crystal silicon thin film.
21. A semiconductor device, comprising: an insulating substrate having a surface on which a first SiO 2 film is formed; a single-crystal silicon thin film having bonded thereto a second SiO 2 film, which single-crystal silicon thin film is bonded to the insulating substrate via the first and second SiO 2 films, the single-crystal silicon thin film having a substantially uniform thickness and a substantially damage-free surface; a non-single-crystal silicon thin film formed on the insulating substrate in a region where the single-crystal silicon thin film is not bonded with the insulating substrate, which non-single-crystal silicon thin film is formed on the insulating substrate via the first SiO 2 film and a third SiO 2 film; and transistor elements formed from the single-crystal silicon thin film, wherein the second SiO 2 film and the third SiO 2 film are of different thicknesses, and wherein the transistor elements are arranged such that, from an insulating substrate side, a gate electrode, a gate insulating film, and the single-crystal silicon thin film are formed in this order.
22. A semiconductor device, comprising: an insulating substrate having a surface on which a first SiO 2 film is formed; and a single-crystal silicon thin film bonded with the insulating substrate on a partial region of the insulating substrate, wherein the single-crystal silicon thin film has a substantially uniform thickness and has a surface substantially free of damage, the single-crystal silicon thin film has bonded thereto a second SiO 2 film, the surface of the insulating substrate, where the first SiO 2 film is formed, is bonded with the single-crystal silicon thin film, where the second SiO 2 film is formed, and a transistor formed using the single-crystal silicon thin film is arranged such that, from an insulating substrate side, a gate electrode, a gate insulating film, and the single-crystal silicon thin film are formed in this order.
23. A semiconductor device, comprising: an insulating substrate having a surface on which a first SiO 2 film is formed; a single-crystal silicon thin film bonded to the insulating substrate, the single-crystal silicon thin film having a substantially uniform thickness and a substantially damage-free surface; and transistor elements formed from the single-crystal silicon thin film, wherein the single-crystal silicon thin film has bonded thereto a second SiO 2 film, the surface of the insulating substrate on which the first SiO 2 film is formed is bonded with the second SiO 2 film thereby bonding the single-crystal silicon thin film to the insulating substrate, the bonded single-crystal silicon thin film is disposed on only part of the insulating substrate on which the first SiO 2 film is formed, and the transistor elements are arranged such that, from an insulating substrate side, a gate electrode, a gate insulating film, and the single-crystal silicon thin film are formed in this order.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
March 18, 2004
July 17, 2007
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