Cost is reduced and reliability is improved with a BGA (Ball Grid Array) type semiconductor device which has ball-shaped conductive terminals. A first wiring is formed on an insulation film which is formed on a surface of a semiconductor die. A glass substrate is bonded over the surface of the semiconductor die, and a side surface and a back surface of the semiconductor die are covered with an insulation film. A second wiring is connected to a side surface or a back surface of the first wiring and extending over the back surface of the semiconductor die. A conductive terminal such as a bump is formed on the second wiring.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device comprising: a semiconductor die; a first insulation film formed on a front surface of the semiconductor die; a first wiring layer formed on the first insulation film so that part of a bottom surface of the first wiring layer is in contact with the first insulation film; a second insulation film comprising a side film and a back film, the side film being disposed on an outside sidewall of the semiconductor die and the back film being disposed on a back surface of the semiconductor die; a second wiring layer formed on the side film and the back film so that an edge of the second wiring layer is in direct physical contact with another part of the bottom surface of the first wiring layer; a third insulation film formed on the second wiring layer; and a conductive terminal formed on the second wiring layer.
2. The semiconductor device of claim 1 , further comprising a holding member disposed over the front surface of the semiconductor die and holding the semiconductor die.
3. The semiconductor device of claim 2 , wherein the holding member comprises a glass plate, a plastic plate, a film, a silicon substrate, a reclaimed silicon substrate, an oxide film or a transparent resin plate.
4. The semiconductor device of claim 1 , wherein the conductive terminal penetrates the third insulation film.
5. The semiconductor device of claim 1 , wherein the side film and the back film are made of a same material.
6. The semiconductor device of claim 1 , wherein the outside sidewall of the semiconductor die is slanted so that the front surface of the semiconductor die is larger than the back surface of the semiconductor die.
7. The semiconductor device of claim 1 , wherein the semiconductor die comprises a CCD image sensor.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
August 18, 2005
September 18, 2007
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