In a method for manufacturing a semiconductor device wherein via holes are formed in an SiC substrate, a stacked film consisting of a Ti film and an Au film is formed on the back face of the SiC substrate, and a Pd film is formed thereon. Then, an Ni film is formed by non-electrolytic plating, using the Pd film as a catalyst. Thereafter, via holes penetrating through the SiC substrate are formed by etching, using the Ni film as a mask.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for manufacturing a semiconductor device comprising: forming a first metal pattern on a surface of an SiC substrate; forming a Pd film on the said first metal pattern; forming an Ni film on of said Pd film by non-electrolytic plating, using said Pd film as a catalyst; etching said SiC substrate, using said Ni film as a mask, to form via holes penetrating through said SiC substrate; and forming metal films on internal surfaces of said via holes.
2. A method for manufacturing a semiconductor device comprising: forming a first metal pattern on a surface of an SiC substrate; forming an Ni film on said first metal pattern by electrolytic plating, using said first metal pattern as an electrode; etching said SiC substrate, using said Ni film as a mask, to form via holes penetrating through said SiC substrate; and forming metal films on internal surfaces of said via holes.
3. The method for manufacturing a semiconductor device according to claim 1 , further comprising roughening said surface of said SiC substrate before the forming said first metal pattern.
4. The method for manufacturing a semiconductor device according to claim 2 , further comprising roughening said surface of said SiC substrate before forming said first metal pattern.
5. The method for manufacturing a semiconductor device according to claim 1 , including forming said first metal pattern by stacking a Ti film and a Au film sequentially.
6. The method for manufacturing a semiconductor device according to claim 2 , including forming said first metal pattern by stacking a Ti film and a Au film sequentially.
7. The method for manufacturing a semiconductor device according to claim 1 , including forming said metal films on the internal surfaces of said via holes by stacking a Ti film and a Au film sequentially.
8. The method for manufacturing a semiconductor device according to claim 2 , including forming said metal films on the internal surfaces of said via holes by stacking a Ti film and a Au film sequentially.
9. The method for manufacturing a semiconductor device according to claim 7 , including forming said Ti film to cover said Ni film.
10. The method for manufacturing a semiconductor device according to claim 8 , including forming said second Ti film to cover said Ni film.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
June 22, 2006
October 30, 2007
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