To fabricate a semiconductor device, a pattern of recesses and lands is formed on a copper sheet as a matrix sheet, and BGA pads are formed on the lands on the copper sheet. An insulating layer is formed on the copper sheet to transfer the pattern of recesses and lands from the copper sheet to the insulating layer for thereby forming recesses in the insulating layer and placing BGA pads in the recesses in the insulating layer. Vias are formed through the insulating layer, and a conductive layer serving as circuits and interconnections is formed, the conductive layer being connected to the BGA pads by the vias. When the copper sheet is removed, the BGA pads are positioned within the recesses in the insulating layer. The BGA pads have surfaces positioned higher than the bottom of the recesses and lower than the surface of the insulating layer. A semiconductor chip is mounted on the conductive layer, and solder balls are joined to the BGA pads. Both the productivity of a process of mounting the solder balls and the bonding strength of the solder balls are increased.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of fabricating a board for mounting a semiconductor chip thereon, said method comprising the steps of: forming an etching resist pattern at a portion that corresponds to a position for an electrode pad on one surface of a matrix sheet which is a metal plate; etching said one surface of said metal plate to make the portion of said metal plate, which is covered by said etching resist pattern, convex shape; peeling and removing said etching resist pattern; forming a plating resist on said one surface of said metal plate, said plating resist having an opening which has a smaller diameter than the diameter of said convex-shaped portion at a portion that corresponds to a position for the electrode pad; etching an exposed portion of said metal plate through said opening of said plating resist to make a recessed portion on a surface of said convex-shaped portion; forming an electroplating layer at said recessed portion to form the electrode pad which protrudes from said surface of said convex-shaped portion; peeling and removing said plating resist; forming an insulating layer of insulating resin on said surface of said metal plate on which said electrode pad is formed, by a single process using a single material; forming a via hole in said insulating layer; forming a via in said via hole in said insulating layer by plating; forming a conductive layer by plating on a surface of said insulating layer remote from said metal plate, said conductive layer being connected to said electrode pad through said via; and removing said metal plate by etching, wherein a pattern of recess and land is transferred from said surface of said metal plate to a surface of said insulating layer in order to form a recess on said insulating layer and to position said electrode pad in said recess so that the outer periphery of said electrode pad is located away from the inner periphery of said recess and a surface of said electrode pad is positioned between a bottom surface of said recess and said surface of said insulating layer.
2. A method according to claim 1 , wherein an overhanging portion of said convex-shaped portion of said metal plate and a corner portion of said metal plate are removed and then said insulating layer is formed in said step of forming said insulating layer after said step of peeling and removing said plating resist.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
January 6, 2005
December 4, 2007
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