A structure of an integrated circuit is provided. A gate dielectric is formed on a semiconductor substrate, and a gate is formed over a gate dielectric on the semiconductor substrate. Source/drain junctions are formed in the semiconductor substrate. Ultra-uniform suicides are formed on the source/drain junctions, and a dielectric layer is deposited above the semiconductor substrate. Contacts are then formed in the dielectric layer to the ultra-uniform silicides.
Legal claims defining the scope of protection, as filed with the USPTO.
1. An integrated circuit comprising: a semiconductor substrate having source/drain junctions; a gate dielectric on the semiconductor substrate; a gate over the gate dielectric; ultra-uniform silicides on the source/drain junctions; a dielectric layer above the semiconductor substrate; and contacts in the dielectric layer to the ultra-uniform silicides.
2. The integrated circuit as claimed in claim 1 wherein: the ultra-uniform silicides is an ultra-thin thickness of a silicide metal of not more than 50 Å thick.
3. The integrated circuit as claimed in claim 1 wherein: the dielectric layer deposits a dielectric material having a dielectric constant selected from a group consisting of medium, low, and ultra-low dielectric constants.
4. The integrated circuit as claimed in claim 1 wherein: the contacts to the ultra-uniform silicides are of materials selected from a group consisting of tantalum, titanium, tungsten, copper, gold, silver, an alloy thereof, a compound thereof, and a combination thereof.
5. An integrated circuit comprising: a silicon substrate having source/drain junctions; a gate oxide on the silicon substrate; a polysilicon gate over the gate oxide; an ultra-uniform nickel silicide on the source/drain junctions and the polysilicon gate, the ultra-uniform nickel silicide having no variations in thickness greater than 3% of the overall thickness; a dielectric layer above the silicon substrate; and contacts in the dielectric layer to the ultra-uniform nickel silicide.
6. The integrated circuit as claimed in claim 5 wherein: the ultra-uniform nickel silicide is an ultra-thin thickness of a silicide metal of not more than 50 Å thickness.
7. The integrated circuit as claimed in claim 5 wherein: the dielectric layer is a dielectric material having a dielectric constant below 4.2.
8. The integrated circuit as claimed in claim 5 wherein: the contacts to the ultra-uniform silicides are of materials selected from a group consisting of tantalum, titanium, tungsten copper, gold, silver, an alloy thereof, a compound thereof, and a combination thereof.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
October 17, 2005
December 11, 2007
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