It is necessary to stabilize the free layer of GMR or TMR devices by providing a longitudinal bias field. As read tracks become very narrow, this field can drastically reduce the strength of the output signal. This problem has been overcome by adding an additional, compensatory, bias layer. This layer is permanently magnetized in the same direction as the main bias magnet. Through control of the magnetization strength and location of the compensatory bias layer, cancellation of the field induced in the free layer, by the main bias layers, is achieved. A process for manufacturing the devices is also described.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A process for manufacturing a CPP GMR read head, comprising: providing a lower magnetic shield; depositing a lower conductive lead layer on said lower magnetic shield; depositing a compensatory bias layer on said lower conductive lead layer; depositing, on said compensatory bias layer, a GMR stack whose top layer is a conductive non-magnetic layer; depositing a free layer on said top layer; depositing an upper conductive lead layer on said free layer; coating said upper conductive lead layer with a layer of photoresist and then patterning said photoresist to form a mask that defines said read head; using said mask, etching unprotected parts of said upper conductive lead layer, said free layer, said GMR stack, said compensatory bias layer, and said lower conductive lead layer, thereby forming a pedestal, that has vertical sidewalls as far down as said lower conductive lead layer and sloping sidewalls formed from said lower conductive lead layer; depositing a first dielectric layer that lies on said lower magnetic shield and sloping side walls and that abuts all of said vertical sidewalls; on said first dielectric layer, depositing a permanent magnet layer; depositing a second dielectric layer on said permanent magnet layer; then removing all photoresist; and depositing an upper magnetic shield.
2. The process recited in claim 1 wherein said compensatory bias layer is CoPt, CoCrPt, antiferromagnetically coupled CoFe, or a CoFe/Ru/CoFe laminate.
3. The process recited in claim 1 wherein said compensatory bias layer is between about 0.005 and 0.02 microns thick.
4. The process recited in claim 1 wherein said compensatory bias layer is between about 0.02 and 0.04 microns below said free layer.
5. A process for manufacturing a TMR read head, comprising: providing a lower magnetic shield; depositing a lower conductive lead layer on said lower magnetic shield; depositing a compensatory bias layer on said lower conductive lead layer; depositing, on said compensatory bias layer, a TMR stack whose top layer is a non-magnetic tunneling dielectric layer; depositing a free layer on said top layer; depositing an upper conductive lead layer on said free layer; coating said upper conductive lead layer with a layer of photoresist and then patterning said photoresist to form a mask that defines said read head; using said mask, etching unprotected parts of said upper conductive lead layer, said free layer, said TMR stack, said compensatory bias layer, and said lower conductive lead layer, thereby forming a pedestal, that has vertical sidewalls as far down as said lower conductive lead layer and sloping sidewalls formed from said lower conductive lead layer; depositing a first dielectric layer that lies on said lower magnetic shield and sloping side walls and that abuts all of said vertical sidewalls; on said first dielectric layer, depositing a permanent magnet layer; depositing a second dielectric layer on said permanent magnet layer; then removing all photoresist; and depositing an upper magnetic shield.
6. The process recited in claim 5 wherein said compensatory bias layer is CoPt, CoCrPt, antiferromagnetically coupled CoFe, or a CoFe/Ru/CoFe laminate.
7. The process recited in claim 5 wherein said compensatory bias layer is between about 0.005 and 0.02 microns thick.
8. The process recited in claim 5 wherein said compensatory bias layer is between about 0.02 and 0.04 microns below said free layer.
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October 11, 2006
January 22, 2008
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