A first insulating film consisting of an insulating material is formed on a major surface of a semiconductor substrate. On the first insulating film, a wire comprising a first conductive layer, which contains one of elemental Ti and a Ti compound, is formed. Cover films consisting of silicon nitride cover the upper surface, the bottom surface, and the side surfaces of the wire having a multilayer structure. Accordingly, a semiconductor device in which insulation defects are unlikely to occur even when the degree of integration is increased can be provided.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device comprising: a first insulating film provided on a principal surface of a semiconductor substrate; a wire formed on the first insulating film and comprising a first conductive layer consisting of titanium or titanium compound; a cover film consisting of silicon nitride and covering an upper surface, a bottom surface, and a side surface of the wire, wherein said wire is a layered structure and a bottom surface of said first conductive layer constitutes a bottom surface of said layered structure; and further comprising a tensile film disposed above the wire and having an internal tensile stress.
2. A semiconductor device according to claim 1 , further comprising: a capacitor disposed on the tensile film; an active element disposed below the tensile film; and a capacitor connection member penetrating through the tensile film and connecting one electrode of the capacitor to the active element.
3. A semiconductor device according to claim 1 , wherein the tensile film comprises silicon nitride.
4. A semiconductor device according to claim 3 , wherein the tensile film has a thickness of 70 nm or more.
5. A semiconductor device according to claim 1 , wherein the film having the internal tensile stress is not formed on a rear surface opposite to the principal surface of the semiconductor substrate.
6. A semiconductor device comprising a first insulating film provided on a principal surface of a semiconductor substrate; a wire formed on the first insulating film and comprising a first conductive layer consisting of titanium or titanium compound; a cover film consisting of silicon nitride and covering an upper surface, a bottom surface, and a side surface of the wire; a second insulating film disposed on the first insulating film so as to cover the upper surface of the wire, the cover film covering the upper surface of the wire being disposed between the wire and the second insulating film; and a conductive plug comprising a conductive material, which penetrates through the first insulating film and the second insulating film, and which passes by the wire.
7. A semiconductor device comprising: a first insulating film provided on a semiconductor substrate; a wire formed on the first insulating film and comprising a first conductive layer consisting of titanium or titanium compound; and a cover film consisting of silicon nitride and covering an upper surface, a bottom surface, and a side surface of the wire, wherein a thickness of a part of the cover film covering the bottom surface is at least 10 nm.
8. A semiconductor device according to claim 7 , wherein the thickness of the cover film covering the bottom surface is at most 20 nm.
9. A semiconductor device comprising: a first insulating film provided on a principal surface of a semiconductor substrate; a wire formed on the fist insulating film and comprising a first conductive layer consisting of titanium or titanium compound; a cover film consisting of silicon nitride and covering an upper surface, a bottom surface, and a side surface of the wire; and a tensile film disposed above the wire and having an internal tensile stress.
10. A semiconductor device according to claim 9 , further comprising: a capacitor disposed on the tensile film; an active element disposed below the tensile film; and a capacitor connection member penetrating through the tensile film and connecting one electrode of the capacitor to the active element.
11. A semiconductor device according to claim 9 , wherein the tensile film comprises silicon nitride.
12. A semiconductor device according to claim 11 , wherein the tensile film has a thickness of 70 nm or more.
13. A semiconductor device according to claim 9 , wherein the film having the internal tensile stress is not formed on a rear surface opposite to the principal surface of the semiconductor substrate.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
February 22, 2002
May 13, 2008
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