Patentable/Patents/US-7426131
US-7426131

Programmable memory device circuit

PublishedSeptember 16, 2008
Assigneenot available in USPTO data we have
Inventorsnot available in USPTO data we have
Technical Abstract

Circuits for writing, reading, and erasing a programmable metallization cell are disclosed. The programming circuits compensate for parasitic capacitance and/or parasitic resistance. The parasitic resistance and/or capacitance is compensated for using a feedback loop or a time current filter. Various circuits also measure a switching speed of the programmable metallization cell.

Patent Claims
5 claims

Legal claims defining the scope of protection, as filed with the USPTO.

1

1. A method for compensating a resistance of access elements in an array of programmable variable resistance cells to force a reference bias across the programmable variable resistance cells, said method comprising: replicating an access element from the array of programmable variable resistance cells to form a replicated element and coupling the replicated element to a voltage reference; forcing the voltage reference across an access element and a programmable variable resistance cell; measuring a produced current from the programmable variable resistance cell; mirroring said produced current to form an added voltage drop to the reference voltage; and forcing the reference voltage and added voltage drop across the access element and the programmable variable resistance cell.

2

2. A circuit for compensating a resistance of access elements in an array of programmable variable resistance cells to force a reference bias across the programmable variable resistance comprising: an array of programmable variable resistance cells, each cell having an anode and a cathode, wherein said array of programmable variable resistance is coupled together with a common anode; an isolation switch coupled to at least one cathode; a reference voltage coupled to an amplifier through replicated isolation switches; a transconductance device coupled to the amplifier by a voltage input, wherein the transconductance device current output is coupled to a programmable variable resistance cell through the isolation switch; and a current mirror with an input coupled to said transconductance device current output and an output coupled to the replicated isolation switches and to the input of said amplifier.

3

3. The circuit of claim 2 , wherein said array of programmable variable resistance cells includes a plurality of elements coupled together with a common cathode.

4

4. The circuit of claim 2 , wherein said current mirror comprises a transistor.

5

5. The circuit of claim 2 , wherein a compensation capacitor is coupled to said amplifier.

Classification Codes (CPC)

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Patent Metadata

Filing Date

November 1, 2006

Publication Date

September 16, 2008

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Cite as: Patentable. “Programmable memory device circuit” (US-7426131). https://patentable.app/patents/US-7426131

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