The invention comprises integrated circuitry and to methods of forming capacitors. In one implementation, integrated circuitry includes a capacitor having a first capacitor electrode, a second capacitor electrode and a high K capacitor dielectric region received therebetween. The high K capacitor dielectric region has a high K substantially amorphous material layer and a high K substantially crystalline material layer. In one implementation, a capacitor forming method includes forming a first capacitor electrode layer over a substrate. A substantially amorphous first high K capacitor dielectric material layer is deposited over the first capacitor electrode layer. The substantially amorphous high K first capacitor dielectric material layer is converted to be substantially crystalline. After the converting, a substantially amorphous second high K capacitor dielectric material layer is deposited over the substantially crystalline first high K capacitor dielectric material layer. A second capacitor electrode layer is formed over the substantially amorphous second high K capacitor dielectric material layer.
Legal claims defining the scope of protection, as filed with the USPTO.
1. Integrated circuitry comprising: a first electrode; a second electrode; a dielectric region between the first and second electrodes, the dielectric region comprising a first electrically insulative layer and a second electrically insulative layer, the first electrically insulative layer comprising a percentage of crystalline material and the second electrically insulative layer comprising a percentage of amorphous material, at least one of the percentages comprising about 70% to about 98%; and wherein the percentage of the crystalline material is different from the percentage of the amorphous material.
2. The integrated circuitry of claim 1 wherein the at least one of the percentages is less than or equal to about 95%.
3. The integrated circuitry of claim 1 wherein the at least one of the percentages is less than or equal to about 90%.
4. The integrated circuitry of claim 1 wherein the at least one of the percentages is less than or equal to about 85%.
5. The integrated circuitry of claim 1 wherein both of the percentages are about 98%.
6. The integrated circuitry of claim 1 wherein the at least one of the percentages comprises the percentage for the crystalline material.
7. The integrated circuitry of claim 1 wherein the at least one of the percentages comprises the percentage for the amorphous material.
8. Integrated circuitry comprising: a first conductive layer; a first dielectric layer over the first conductive layer, the first dielectric layer comprising a percentage of amorphous material; a second dielectric layer over the first conductive layer, the second dielectric layer comprising a percentage of crystalline material, the percentage of crystalline material being different from the percentage of amorphous material; and a second conductive layer over the first and second dielectric layers.
9. The integrated circuitry of claim 8 wherein the first dielectric layer and the second dielectric layer comprise different chemical compositions.
10. The integrated circuitry of claim 8 wherein the percentage of crystalline material comprises about 70% to about 95%.
11. The integrated circuitry of claim 8 wherein the percentage of amorphous material comprises about 70% to about 95%.
12. Integrated circuitry comprising: a substrate; a transistor over the substrate, the transistor comprising a source region and a drain region; a capacitor over the substrate and electrically coupled to one of the source and drain regions, the capacitor comprising: a first electrode layer; a second electrode layer; and a dielectric layer comprising amorphous material and crystalline material intermediate the first and second electrode layers, the dielectric layer comprising a thickness of from about 40 Angstroms to about 500 Angstroms; and wherein the amorphous material comprises a percentage of amorphous material, and wherein the crystalline material comprises a percentage of crystalline material, and wherein the percentage of the crystalline material is different from the percentage of the amorphous material.
13. The integrated circuitry of claim 12 wherein the percentage of the amorphous material comprises a range of about 70% to about 98%.
14. The integrated circuitry of claim 12 wherein the transistor and the capacitor are components of DRAM circuitry.
15. The integrated circuitry of claim 12 wherein the percentage of the amorphous material comprises a range of about 70% to about 95%.
16. The integrated circuitry of claim 12 wherein the percentage of the crystalline material comprises a range of about 70% to about 98%.
17. The integrated circuitry of claim 12 wherein the transistor and the capacitor are components of logic circuitry.
18. The integrated circuitry of claim 12 wherein the transistor and the capacitor are components of memory circuitry.
19. Integrated circuitry comprising: a first electrode; a second electrode; a dielectric region between the first and second electrodes, the dielectric region comprising a crystalline portion over an amorphous portion, and wherein one of the amorphous portion and the crystalline portion is less than entirely amorphous or crystalline, respectively; and wherein the amorphous portion comprises a percentage of amorphous material, and wherein the crystalline portion comprises a percentage of crystalline material, and wherein the percentage of the crystalline material is different from the percentage of the amorphous material.
20. The integrated circuitry of claim 19 wherein the amorphous portion is less than entirely amorphous.
21. The integrated circuitry of claim 19 wherein the crystalline portion is less than entirely crystalline.
22. The integrated circuitry of claim 19 wherein the crystalline portion is about 70% to about 98% crystalline.
23. The integrated circuitry of claim 19 wherein the dielectric region comprises a thickness in a range from about 40 Angstroms to about 500 Angstroms.
24. The integrated circuitry of claim 19 wherein the first electrode comprises metal.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
February 24, 2006
November 4, 2008
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