Patentable/Patents/US-7491895
US-7491895

Wiring substrate and method of fabricating the same

PublishedFebruary 17, 2009
Assigneenot available in USPTO data we have
Inventorsnot available in USPTO data we have
Technical Abstract

A wiring substrate is provided with an insulating resin film; and first and second conductive films provided on the back side and top side of the insulating resin film, respectively. The wiring substrate includes a via formed to fill a recess provided in the insulating resin film and electrically connecting the top side and back side of the insulating resin film. The via includes a first metal film formed to cover the side wall of the recess, an oxide film formed to cover the first meal film, and a second metal film formed on the metal oxide film.

Patent Claims
13 claims

Legal claims defining the scope of protection, as filed with the USPTO.

1

1. A wiring substrate comprising: a substrate; and wiring that fills a recess in the substrate, wherein the wiring comprises a first metal film that covers the side wall of the recess, a metal oxide film that covers the first metal film, and a second metal film on the metal oxide film.

2

2. The wiring substrate according to claim 1 , wherein the first metal film and the second metal film are copper.

3

3. The wiring substrate according to claim 1 , wherein the metal oxide film is an oxidized form of the first metal film.

4

4. The wiring substrate according to claim 2 , wherein the metal oxide film is an oxidized form of the first metal film.

5

5. The wiring substrate according to claim 1 , wherein the substrate is an insulating resin film.

6

6. The wiring substrate according to claim 2 , wherein the substrate is an insulating resin film.

7

7. The wiring substrate according to claim 3 , wherein the substrate is an insulating resin film.

8

8. The wiring substrate according to claim 4 , wherein the substrate is an insulating resin film.

9

9. The wiring substrate of claim 2 wherein the metal oxide film has a thickness equal to or less than 10 nm.

10

10. The wiring substrate of claim 2 wherein the metal oxide film has a thickness equal to or less than 1 nm.

11

11. The wiring substrate of claim 10 wherein the metal oxide film has a thickness equal to or greater than 0.1 nm.

12

12. A method of fabricating a wiring substrate comprising the steps of: forming a recess in a substrate; forming a first metal film so as to cover the side wall of the recess; forming a metal oxide film on the first metal film by oxidizing the surface of the first metal film; and forming a second metal film on the metal oxide film.

13

13. The method of fabricating a wiring substrate according to claim 12 , wherein the first metal film and the second metal film are formed of copper.

Classification Codes (CPC)

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Patent Metadata

Filing Date

May 26, 2005

Publication Date

February 17, 2009

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Cite as: Patentable. “Wiring substrate and method of fabricating the same” (US-7491895). https://patentable.app/patents/US-7491895

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