Provided is a method for forming a semiconductor element such as film. The method comprises the steps of: The method does not require any step of vacuum deposition or sintering.Also provided is a semiconductor element itself. The element comprises semiconductor particles in a matrix of a semiconductor binder that has the same conductivity type as the semiconductor particles and which is the same or a different material than that forming the particles, the semiconductor binder electrically connecting adjacent semiconductor particles.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of forming an organic semiconductor element having a gate electrode, a source electrode and a drain electrode, the method comprising: applying a first liquid material to a portion between the source electrode and the drain electrode, the first liquid material including a plurality of particles formed from a first organic semiconductor, the particles being covered with a capped material; removing the capping material that covers the plurality of particles by heating at a temperature of 100-150° C.; applying to the portion a solution of a second organic semiconductor, the first and second organic semiconductors being different materials, the second organic semiconductor having a lower intrinsic charge carrier mobility than the first organic semiconductor; and solidifying a resulting mixture including the particles formed from the first organic semiconductor and the solution to form a semiconductor film comprising particles of the first organic semiconductor in a matrix of the second organic semiconductor in which: (i) the volume ratio of the particles of the first organic semiconductor to the matrix of the second organic semiconductor is in the range 50:50-95:5; and (ii) the molecules of the second organic semiconductor are bonded to the particles of the first organic semiconductor by means π-π* interactions.
2. The method according to claim 1 , wherein the first organic semiconductor is a pentacene.
3. The method according to claim 1 , wherein the first organic semiconductor is a hexabenzocoronene.
4. The method according to claim 1 , wherein the second organic semiconductor comprises a molecule end-capped with a phenyl ring bearing one or more electrons accepting substituents.
5. The method according to claim 1 , wherein the second organic semiconductor comprises a molecule end-capped with a perylene diimide moiety.
6. The method according to claim 1 , wherein the second organic semiconductor is a polythiophene.
7. The method according to claim 6 , wherein the second organic semiconductor is a poly(3-hexylthiophene).
8. The method according to claim 1 , wherein the first liquid material is applied by ink-jet printing.
9. The method according to claim 1 , wherein the solution of the second organic semiconductor is applied by ink-jet printing.
10. The method according to claim 1 , wherein the source and drain electrodes are formed on an insulating layer, the insulating layer is formed over the gate electrode, and the gate electrode is formed over a substrate that is made from a plastic material.
11. The method according to claim 1 , wherein the resulting mixture of the first liquid material and the solution is solidified by heating.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
May 10, 2005
April 14, 2009
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.