When the CW laser is employed for annealing the semiconductor film, a device having a high characteristic can be expected. On the other hand, when the beam shaped to be elliptical is scanned on the semiconductor film, a proportion of excimer-like crystal grain region becomes large and this is a problem in point of high integration. The present invention is to make the excimer-like crystal grain region formed over the semiconductor film as small as possible.In the present invention, a fundamental wave having a wavelength of approximately 1 μm is irradiated supplementarily to the semiconductor film, which is the irradiated surface, simultaneously with a harmonic emitted from a CW laser. In addition, the fundamental wave is irradiated with a large amount of energy to a region irradiated by the harmonic with a small amount of energy, and the fundamental wave is irradiated with a small amount of energy to a region irradiated by the harmonic with a large amount of energy. Thus it becomes possible to form the long crystal grain region in the semiconductor film while suppressing the formation of the excimer-like crystal grain region.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for manufacturing a semiconductor device comprising: forming a non-single crystal semiconductor film over a substrate, shaping a beam into a second beam via a light-blocking film wherein the second beam has a wavelength range in which an absorption coefficient to the non-single crystal semiconductor film is 5×10 2 /cm or less and an absorption coefficient to a melted state of the non-single crystal semiconductor film is 5×10 3 /cm or more; irradiating a first beam having a wavelength range in which an absorption coefficient to the non-single crystal semiconductor film is 5×10 3 /cm or more simultaneously with the second beam in such a way that the first beam and the second beam are overlapped on the non-single crystal semiconductor film, and moving the non-single crystal semiconductor film to a first direction relative to the first beam and the second beam.
2. A method for manufacturing a semiconductor device comprising: forming a non-single crystal semiconductor film over a substrate, shaping a beam into a second beam via a light-blocking film wherein the second beam has an absorption coefficient α to a melted state of the non-single crystal semiconductor film and has an absorption coefficient β to a solid state of the non-single crystal semiconductor film and an inequality of α>10β is satisfied; irradiating a first beam melting the non-single crystal semiconductor film simultaneously with the second beam in such a way that the first beam and the second beam are overlapped on the non-single crystal semiconductor film, and moving the non-single crystal semiconductor film to a first direction relative to the first beam and the second beam.
3. A method for manufacturing a semiconductor device comprising: forming a non-single crystal semiconductor film over a substrate, processing a first beam emitted from a laser oscillator 1 outputting a wavelength not longer than that of visible light into a long beam on an irradiated surface assuming that the non-single crystal semiconductor film is the irradiated surface, emitting a beam having a fundamental wave from a laser oscillator 2 outputting the fundamental wave with energy distribution thereof homogenized in a region irradiated with the first beam; shaping the beam having the fundamental wave into a second beam having the fundamental wave via a light-blocking film; irradiating the second beam in such a way that the first beam and the second beam are overlapped on the irradiated surface, forming a long crystal grain region and an inferior crystalline region in opposite ends of the long crystal grain region while moving the irradiated surface to a first direction relative to the first beam and the second beam, and moving the irradiated surface to a second direction relative to the first beam and the second beam.
4. A method for manufacturing a semiconductor device comprising: forming a non-single crystal semiconductor film over a substrate, processing a first beam emitted from a laser oscillator 1 outputting a wavelength not longer than that of visible light into a long beam on an irradiated surface assuming that the non-single crystal semiconductor film is the irradiated surface, emitting a beam having a fundamental wave from a laser oscillator 2 outputting the fundamental wave; shaping the beam having the fundamental wave into a second beam having the fundamental wave via a light-blocking film; irradiating the second beam so as to overlap with the first beam in such a way that energy of the second beam is decreased in a region where energy of the first beam is high, and the energy of the second beam is increased in a region where the energy of the first beam is low, forming a long crystal grain region and an inferior crystalline region in opposite ends of the long crystal grain region while moving the irradiated surface to a first direction relative to the first beam and the second beam, and moving the irradiated surface to a second direction relative to the first beam and the second beam.
5. A method for manufacturing a semiconductor device comprising: forming a non-single crystal semiconductor film over a substrate, processing a first beam emitted from a laser oscillator 1 outputting a wavelength not longer than that of visible light into a long beam on an irradiated surface assuming that the non-single crystal semiconductor film is the irradiated surface, emitting a beam having a fundamental wave from a laser oscillator 2 outputting the fundamental wave; shaping the beam having the fundamental wave into a second beam having the fundamental wave via a light-blocking film; irradiating the second beam so as to overlap with the first beam in such a way that a width of the second beam is narrowed in a region where energy of the first beam is high, and the width of the second beam is broadened in a region where the energy of the first beam is low, forming a long crystal grain region and an inferior crystalline region in opposite ends of the long crystal grain region while moving the irradiated surface to a first direction relative to the first beam and the second beam, and moving the irradiated surface to a second direction relative to the first beam and the second beam.
6. A method for manufacturing a semiconductor device according to any one of claims 1 to 5 , wherein when a width of the long crystal grain region is assumed to be X 1 , and a width of the inferior crystalline region in the opposite ends of the second beam is assumed to be X 2 , X 1 and X 2 satisfy an inequality of X 2 / (2X 2 +X 1 )<0.1.
7. A method for manufacturing a semiconductor device according to any one of claims 1 to 5 , wherein the laser oscillator 1 or the laser oscillator 2 is a continuous wave gas laser, a continuous wave solid laser, or a continuous wave metal laser.
8. A method for manufacturing a semiconductor device according to any one of claims 1 to 5 , wherein the laser oscillator 1 or the laser oscillator 2 is one selected from the group consisting of an Ar laser, a Kr laser, a CO 2 laser, a YAG laser, a YVO 4 laser, a YLF laser, a YA 1 O 3 laser, a Y 2 O 3 laser, a ruby laser, an alexandrite laser, a Ti: Sapphire laser, a helium-cadmium laser, a copper vapor laser, or a gold vapor laser.
9. A method for manufacturing a semiconductor device according to any one of claims 1 to 5 , wherein the first direction and the second direction are orthogonalized to each other.
10. A method for manufacturing a semiconductor device according to any one of claims 1 to 5 , wherein the irradiated surface is a film formed over a substrate which is transparent to the first beam and which has a thickness of d, wherein an incidence angle φ of the first beam with respect to the irradiated surface satisfies an inequality of φ≧ arctan (W/2d) when a major axis or a minor axis of the long beam is assumed to be W.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
March 5, 2004
April 28, 2009
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