A patterned mask can be formed as follows. A first patterned photoresist is formed over a masking layer and utilized during a first etch into the masking layer. The first etch extends to a depth in the masking layer that is less than entirely through the masking layer. A second patterned photoresist is subsequently formed over the masking layer and utilized during a second etch into the masking layer. The combined first and second etches form openings extending entirely through the masking layer and thus form the masking layer into the patterned mask. The patterned mask can be utilized to form a pattern in a substrate underlying the mask. The pattern formed in the substrate can correspond to an array of capacitor container openings. Capacitor structure can be formed within the openings. The capacitor structures can be incorporated within a DRAM array.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of forming an opening, comprising: providing a substrate having a layer, the layer having a thickness; photolithographically forming a first pattern over the layer, the first pattern comprising a first series of downwardly-projecting features defined by a first photoresist; transferring a substantial reproduction of the first pattern into the layer to a depth which extends less than entirely through the thickness of the layer; after transferring the substantial reproduction of the first pattern into the layer, photolithographically forming at least one subsequent pattern over the layer, the at least one subsequent pattern comprising a second series of downwardly-projecting features defined by a second photoresist, at least some of the downwardly-projecting features of the second series crossing locations of at least some of the downwardly-projecting features of the first series; while the second photoresist remains over the layer, transferring a substantial reproduction of the at least one subsequent pattern into the layer to a depth which extends less than entirely through the thickness of the layer, the combined depths to which the substantial reproductions of the first pattern and the at least one subsequent pattern are transferred into the layer being entirely through the thickness of the layer; and wherein the layer is over a stack of materials, wherein the combined substantial reproductions of the first pattern and at least one subsequent pattern form the layer into a patterned mask having a designated pattern, and further comprising extending a substantial facsimile of the designated pattern into at least one of the materials underlying the patterned mask.
2. The method of claim 1 wherein the stack comprises a semiconductor substrate and at least two of the materials over the substrate; the two materials being a first material and a second material; the second material being over the first material; wherein a first substantial facsimile of the designated pattern is transferred through the second material with first etching conditions; and wherein a second substantial facsimile of the designated pattern is subsequently transferred to the first material with second etching conditions which are different from the first etching conditions.
3. The method of claim 2 wherein the first material comprises silicon and oxygen, the second material comprises a spin-on material and the layer comprises silicon and nitrogen.
4. The method of claim 2 wherein the first material comprises a doped silicon oxide, the second material comprises amorphous carbon and the layer comprises silicon oxynitride.
5. A method of forming container capacitors, comprising: providing a semiconductor substrate; forming an electrically insulative material over the substrate; forming a pair of masking layers over the electrically insulative material; the pair of masking layers being a first masking layer and a second masking layer, the first masking layer being between the second masking layer and the electrically insulative material; the second masking layer having a thickness; photolithographically forming a first pattern over the second masking layer, the first pattern comprising a first series of trenches; transferring a substantial reproduction of the first pattern into the second masking layer to a depth which extends less than entirely through the thickness of the second masking layer; after transferring the substantial reproduction of the first pattern into the second masking layer, photolithographically forming a second pattern over the second masking layer, the second pattern comprising a second series of trenches; at least some of the trenches of the second series crossing locations of at least some of the trenches of the first series; transferring a substantial reproduction of the second pattern into the second masking layer to a depth which extends less than entirely through the thickness of the second masking layer, the combined depths to which the substantial reproductions of the first and second patterns are transferred into the second masking layer being entirely through the thickness of the second masking layer; the combined transferring of the substantial reproductions of the first and second patterns into the second masking layer forming the second masking layer into a patterned mask over the first masking layer; the patterned mask having a capacitor container pattern which defines capacitor container locations as regions where overlap occurs between trenches of the second series and trenches of the first series; transferring a substantial reproduction of the capacitor container pattern from the patterned mask into the first masking layer; transferring a substantial reproduction of the capacitor container pattern from the first masking layer into the electrically insulative material to form capacitor containers within the electrically insulative material; forming a first capacitor electrode, dielectric material and second capacitor electrode extending within the capacitor containers to form capacitor structures within the capacitor containers; and wherein the capacitor container locations are substantially diamond in shape.
6. A method of forming container capacitors, comprising: providing a semiconductor substrate; forming an electrically insulative material over the substrate; forming a pair of masking layers over the electrically insulative material; the pair of masking layers being a first masking layer and a second masking layer, the first masking layer being between the second masking layer and the electrically insulative material; the second masking layer having a thickness; photolithographically forming a first pattern over the second masking layer, the first pattern comprising a first series of trenches; transferring a substantial reproduction of the first pattern into the second masking layer to a depth which extends less than entirely through the thickness of the second masking layer; after transferring the substantial reproduction of the first pattern into the second masking layer, photolithographically forming a second pattern over the second masking layer, the second pattern comprising a second series of trenches; at least some of the trenches of the second series crossing locations of at least some of the trenches of the first series; transferring a substantial reproduction of the second pattern into the second masking layer to a depth which extends less than entirely through the thickness of the second masking layer, the combined depths to which the substantial reproductions of the first and second patterns are transferred into the second masking layer being entirely through the thickness of the second masking layer; the combined transferring of the substantial reproductions of the first and second patterns into the second masking layer forming the second masking layer into a patterned mask over the first masking layer; the patterned mask having a capacitor container pattern which defines capacitor container locations as regions where overlap occurs between trenches of the second series and trenches of the first series; transferring a substantial reproduction of the capacitor container pattern from the patterned mask into the first masking layer; transferring a substantial reproduction of the capacitor container pattern from the first masking layer into the electrically insulative material to form capacitor containers within the electrically insulative material; forming a first capacitor electrode, dielectric material and second capacitor electrode extending within the capacitor containers to form capacitor structures within the capacitor containers; and wherein either the first series of trenches or the second series of trenches are wavy lines.
7. The method of claim 6 wherein the first series of trenches are wavy lines.
8. A method of forming container capacitors, comprising: providing a semiconductor substrate; forming an electrically insulative material over the substrate; forming a pair of masking layers over the electrically insulative material; the pair of masking layers being a first masking layer and a second masking layer, the first masking layer being between the second masking layer and the electrically insulative material; the second masking layer having a thickness; photolithographically forming a first pattern over the second masking layer, the first pattern comprising a first series of trenches; transferring a substantial reproduction of the first pattern into the second masking layer to a depth which extends less than entirely through the thickness of the second masking layer; after transferring the substantial reproduction of the first pattern into the second masking layer, photolithographically forming a second pattern over the second masking layer, the second pattern comprising a second series of trenches; at least some of the trenches of the second series crossing locations of at least some of the trenches of the first series; transferring a substantial reproduction of the second pattern into the second masking layer to a depth which extends less than entirely through the thickness of the second masking layer, the combined depths to which the substantial reproductions of the first and second patterns are transferred into the second masking layer being entirely through the thickness of the second masking layer; the combined transferring of the substantial reproductions of the first and second patterns into the second masking layer forming the second masking layer into a patterned mask over the first masking layer; the patterned mask having a capacitor container pattern which defines capacitor container locations as regions where overlap occurs between trenches of the second series and trenches of the first series; transferring a substantial reproduction of the capacitor container pattern from the patterned mask into the first masking layer; transferring a substantial reproduction of the capacitor container pattern from the first masking layer into the electrically insulative material to form capacitor containers within the electrically insulative material; forming a first capacitor electrode, dielectric material and second capacitor electrode extending within the capacitor containers to form capacitor structures within the capacitor containers; and wherein the first series of trenches are wavy lines, and wherein the second series of trenches are substantially straight lines that are substantially orthogonal to the first series of trenches.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
August 31, 2005
May 26, 2009
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