A metal polishing liquid which contains a compound represented by the following formula (1), an aromatic heterocyclic ring compound, and an oxidizing agent, and a chemical mechanical polishing method using the metal polishing liquid. In the formula (1), R1 denotes an alkylene group, and R2 and R3 each separately denote a hydrogen atom, a halogen atom, an acyl group, an alkyl group, an alkenyl group, an alkynyl group, or an aryl group.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A metal polishing liquid comprising: a compound represented by the following formula (1), an aromatic heterocyclic ring compound, and an oxidizing agent: wherein R 1 denotes an alkylene group having 1 to 8 carbon atoms, R 2 and R 3 each separately denote a hydrogen atom, a halogen atom, an acyl group, an alkyl group, an alkenyl group, an alkynyl group, or an aryl group.
2. The metal polishing liquid of claim 1 , wherein the aromatic heterocyclic ring compound is at least one selected from 1,2,3,4-tetrazole, 5-amino-1,2,3,4-tetrazole, 5-methyl-1,2,3,4-tetrazole, 1,2,3-triazole, 4-amino-1,2,3-triazole, 4,5-diamino-1,2,3-triazole, 1,2,4-triazole, 3-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, and benzotriazole.
3. The metal polishing liquid of claim 1 , further comprising abrasive grains.
4. The metal polishing liquid of claim 3 , wherein the abrasive grains are made of colloidal silica.
5. The metal polishing liquid of claim 1 , the liquid is used for polishing a semiconductor integrated circuit.
6. A chemical mechanical polishing method comprising: contacting a metal polishing liquid that comprises a compound represented by the following formula (1), an aromatic heterocyclic ring compound, and an oxidizing agent with a surface to be polished, and polishing by relatively moving the surface to be polished and a polishing surface: wherein R 1 denotes an alkylene group having 1 to 8 carbon atoms, R 2 and R 3 each separately denote a hydrogen atom, a halogen atom, an acyl group, an alkyl group, an alkenyl group, an alkynyl group, or an aryl group.
7. The chemical mechanical polishing method of claim 6 , wherein the aromatic heterocyclic ring compound is at least one selected from 1,2,3,4-tetrazole, 5-amino-1,2,3,4-tetrazole, 5-methyl-1,2,3,4-tetrazole, 1,2,3 -triazole, 4-amino-1,2,3-triazole, 4,5-diamino-1,2,3-triazole, 1,2,4-triazole, 3-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, and benzotriazole.
8. The chemical mechanical polishing method of claim 6 , further comprising abrasive grains.
9. The chemical mechanical polishing method of claim 8 , wherein the abrasive grains are made of colloidal silica.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 22, 2006
June 9, 2009
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