Embodiments of the invention generally provide a method for forming a doped silicon-containing material on a substrate. In one embodiment, the method provides depositing a polycrystalline layer on a dielectric layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1×1019 atoms/cm3 to about 1×1021 atoms/cm3, wherein the doped polycrystalline layer contains silicon or may contain germanium, carbon, or boron. The substrate may be heated to a temperature of about 800° C. or higher, such as about 1,000° C., during the rapid thermal anneal. Subsequently, the doped polycrystalline layer may be exposed to a laser anneal and heated to a temperature of about 1,000° C. or greater, such within a range from about 1,050° C. to about 1,400° C., for about 500 milliseconds or less, such as about 100 milliseconds or less.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for forming a doped silicon-containing material on a substrate, comprising: depositing a dielectric layer on a substrate; exposing the dielectric layer to a nitridation process to form a nitrided dielectric layer; depositing a polycrystalline layer on the nitrided dielectric layer; implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1×10 19 atoms/cm 3 to about 1×10 21 atoms/cm 3 ; exposing the substrate to a rapid thermal anneal; and exposing the doped polycrystalline layer to a laser anneal.
2. The method of claim 1 , wherein the dielectric layer comprises a material selected from the group consisting of silicon oxide, silicon oxynitride, hafnium oxide, hafnium silicate, aluminum oxide, aluminum silicate, derivatives thereof, and combinations thereof.
3. The method of claim 2 , wherein the dielectric layer comprises a thickness within a range from about 5 Å to about 50 Å.
4. The method of claim 2 , wherein the nitrided dielectric layer comprises a material selected from the group consisting of silicon oxynitride, hafnium oxynitride, nitrided hafnium silicate, aluminum oxynitride, derivatives thereof, and combinations thereof.
5. The method of claim 4 , wherein the nitridation process is a decoupled plasma nitridation process and the nitrided dielectric layer comprises silicon oxynitride.
6. The method of claim 5 , wherein the nitrided dielectric layer comprises a nitrogen concentration within a range from about 1×10 14 atoms/cm 2 to about 1×10 16 atoms/cm 2 .
7. The method of claim 1 , wherein the doped polycrystalline layer is heated to a temperature of about 1,000° C. or greater during the laser anneal.
8. The method of claim 7 , wherein the temperature is about 1,050° C. or greater during the laser anneal.
9. The method of claim 8 , wherein the temperature is within a range from about 1,050° C. to about 1,400° C. during the laser anneal.
10. The method of claim 9 , wherein the doped polycrystalline layer is exposed to the laser anneal for about 500 milliseconds or less.
11. The method of claim 10 , wherein the doped polycrystalline layer is exposed to the laser anneal for about 100 milliseconds or less.
12. The method of claim 1 , wherein the substrate is heated to a temperature of about 800° C. or higher during the rapid thermal anneal.
13. The method of claim 12 , wherein the temperature is about 1,000° C. or higher during the rapid thermal anneal.
14. The method of claim 13 , wherein the doped polycrystalline layer has an electrical resistively of less than about 400 ohms/cm 2 .
15. The method of claim 1 , wherein the doped polycrystalline layer comprises boron at the dopant concentration.
16. The method of claim 15 , wherein the doped polycrystalline layer comprises silicon and carbon.
17. The method of claim 15 , wherein the doped polycrystalline layer comprises silicon and germanium.
18. The method of claim 17 , wherein the doped polycrystalline layer further comprises carbon.
19. A method for forming a doped silicon-containing material on a substrate, comprising: depositing a polycrystalline layer on a dielectric layer; implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1×10 19 atoms/cm 3 to about 1×10 21 atoms/cm 3 , wherein the doped polycrystalline layer comprises silicon, carbon, and boron; exposing the substrate to a rapid thermal anneal; and exposing the doped polycrystalline layer to a laser anneal.
20. The method of claim 19 , wherein the dielectric layer comprises a material selected from the group consisting of silicon oxide, silicon oxynitride, hafnium oxide, hafnium silicate, aluminum oxide, aluminum silicate, derivatives thereof, and combinations thereof.
21. The method of claim 20 , wherein the dielectric layer comprises a thickness within a range from about 5 Å to about 50 Å.
22. The method of claim 20 , wherein the dielectric layer is exposed to a nitridation process to form a nitrided dielectric layer comprising a material selected from the group consisting of silicon oxynitride, hafnium oxynitride, nitrided hafnium silicate, aluminum oxynitride, derivatives thereof, and combinations thereof.
23. The method of claim 22 , wherein the nitridation process is a decoupled plasma nitridation process and the nitrided dielectric layer comprises silicon oxynitride.
24. The method of claim 23 , wherein the nitrided dielectric layer comprises a nitrogen concentration within a range from about 1×10 14 atoms/cm 2 to about 1×10 16 atoms/cm 2 .
25. The method of claim 19 , wherein the doped polycrystalline layer is heated to a temperature of about 1,000° C. or greater during the laser anneal.
26. The method of claim 25 , wherein the temperature is about 1,050° C. or greater during the laser anneal.
27. The method of claim 26 , wherein the temperature is within a range from about 1,050° C. to about 1,400° C. during the laser anneal.
28. The method of claim 27 , wherein the doped polycrystalline layer is exposed to the laser anneal for about 500 milliseconds or less.
29. The method of claim 28 , wherein the doped polycrystalline layer is exposed to the laser anneal for about 100 milliseconds or less.
30. The method of claim 19 , wherein the substrate is heated to a temperature of about 800° C. or higher during the rapid thermal anneal.
31. The method of claim 30 , wherein the temperature is about 1,000° C. or higher during the rapid thermal anneal.
32. A method for forming a doped silicon-containing material on a substrate, comprising: depositing a silicon-containing layer on a substrate; implanting the silicon-containing layer with a dopant to form a doped silicon-containing layer containing a dopant concentration within a range from about 1×10 19 atoms/cm 3 to about 1×10 21 atoms/cm 3 , wherein the doped silicon-containing layer further comprises carbon; exposing the doped silicon-containing layer to a rapid thermal anneal; and heating the doped silicon-containing layer to a temperature of about 1,000° C. or greater during a laser anneal.
33. The method of claim 32 , wherein the doped silicon-containing layer is a polycrystalline layer.
34. The method of claim 33 , wherein the doped silicon-containing layer further comprises germanium.
35. The method of claim 34 , wherein the doped silicon-containing layer further comprises boron.
36. The method of claim 32 , wherein the doped silicon-containing layer further comprises boron.
37. The method of claim 32 , wherein the temperature is about 1,050° C. or greater during the laser anneal.
38. The method of claim 37 , wherein the doped silicon-containing layer is heated to a temperature within a range from about 1,050° C. to about 1,400° C. during the laser anneal.
39. The method of claim 38 , wherein the doped silicon-containing layer is exposed to the laser anneal for about 100 milliseconds or less.
40. The method of claim 32 , wherein the doped silicon-containing layer is heated to a temperature of less than about 1,415° during the laser anneal.
41. The method of claim 40 , wherein the doped silicon-containing layer is heated to a temperature of about 1,350° during the laser anneal.
42. The method of claim 32 , wherein the substrate is heated to a temperature of about 800° or higher during the rapid thermal anneal.
43. The method of claim 42 , wherein the temperature is about 1,000° or higher during the rapid thermal anneal.
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July 5, 2006
November 3, 2009
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