A thin film magnetic memory includes a size-variable Read Only Memory (ROM) region and a size-variable Random Access Memory (RAM) coupled to different ports for parallel access to the ports, respectively. A memory system allowing fast and efficient data transfer can be achieved.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device comprising: a first memory, a second memory arranged separately from said first memory, and storing information different in attribute from storage information of said first memory, a third memory including first and second memory regions each having a plurality of memory cells each nonvolatilely storing information by using characteristics other than a threshold voltage, and arranged corresponding to the first and second memories, each memory region for caching the storage information of a corresponding memory, said first and second memory regions having storage capacities being variable within a storage capacity of said third memory, a transfer control circuit for controlling data transfer between said first and second memories and said first and second memory regions, and an operational processing circuit executing using the storage information.
2. The semiconductor device according to claim 1 , wherein each memory cell includes a magneto-resistive element for storing information.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
May 22, 2008
December 15, 2009
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