Crystallizing silicon using a laser beam transmitted through a mask

1. A method for crystallizing silicon comprising: positioning a substrate having an amorphous silicon layer on a stage; arranging a mask over the substrate, the mask including a first region having a plurality of open parts substantially oriented along the X-axis direction, and a second region having a plurality of open parts substantially oriented along the Y-axis direction, wherein the respective first and second regions of the mask have the open and closed parts having the same width; blocking the second region of the mask and transmitting a laser beam through the mask to form a first crystallizing block in the amorphous silicon layer while moving one of the stage and the mask along the X-axis direction, wherein the first crystallizing block corresponds to a portion where one laser pulse passing through the first region of the mask is irradiated onto the amorphous silicon layer, wherein the crystallization process for the X-axis direction includes: crystallizing the amorphous silicon layer when the first region of the mask is opened, and the stage is moved along the X-axis direction a distance corresponding to the length of one part in the first crystallizing block; moving the stage along the Y-axis direction a distance corresponding to the width of one part in the first crystallizing block after completing the movement of the stage in the X-axis direction; crystallizing the amorphous silicon layer when the first region of the mask is opened, and the stage is moved along the X-axis direction in the opposite direction a distance corresponding to the length of one part in the first crystallizing block; and moving the stage along the Y-axis direction a distance corresponding to the width of the first crystallizing block after completing the movement of the stage in the X-axis direction of the substrate, wherein the crystallization progress for the X-axis direction is repeatedly carried out; and blocking the first region of the mask and transmitting a laser beam through the mask to form a second crystallizing block in the amorphous silicon layer while moving one of the stage and the mask along the Y-axis direction, wherein the second crystallizing block corresponds to a portion where one laser pulse passing through the second region of the mask is irradiated onto the amorphous silicon layer, wherein the crystallization process for the Y-axis direction includes: crystallizing the amorphous silicon layer when the second region of the mask is opened, and the stage is moved along the Y-axis direction a distance corresponding to the length of one part in the second crystallizing block; moving the stage along the X-axis direction a distance corresponding to the width of one part in the second crystallizing block after completing the movement of the stage in the Y-axis direction; crystallizing the amorphous silicon layer when the second region of the mask is opened, and the stage is moved along the Y-axis direction in the opposite direction a distance corresponding to the length of one part in the second crystallizing block; and moving the stage along the X-axis direction a distance corresponding to the width of the second crystallizing block after completing the movement of the stage in the Y-axis direction of the substrate, wherein the crystallization process for the Y-axis direction is repeatedly carried out.

2. The method of claim 1 , wherein each crystallizing block has a size corresponding to the size of a region divided by a constant rate of a reduction lens of a laser crystallizing device.

3. A method for crystallizing silicon comprising: positioning a substrate having an amorphous silicon layer on a stage; arranging a mask over the substrate, the mask including first and second regions each divided into two parts having open parts at complimentary positions; blocking the second region of the mask and transmitting a laser beam through the mask while moving one of the stage and mask along the X-axis direction to form a first crystallizing block in the amorphous silicon layer, wherein a first crystallizing block corresponds to a portion where one laser pulse passing through the first region of the mask is irradiated onto the amorphous silicon layer; and blocking the first region of the mask and transmitting a laser beam through the mask while moving one of the stage and the mask along the Y-axis direction to form a second crystallizing block in the amorphous silicon layer, wherein a second crystallizing block corresponds to a portion where one laser pulse passing through the second region of the mask is irradiated onto the amorphous silicon layer, and wherein the crystallization along the Y-axis direction is performed by moving the stage along the Y-axis direction a distance corresponding to ½ of the length of the second crystallizing block.

4. The method of claim 3 , wherein each crystallizing block has a size corresponding to the size of a region divided by a constant rate of a reduction lens of a laser crystallizing device.

5. The method of claim 3 , wherein a crystallization along the X-axis direction is performed by moving the stage along the X-axis direction a distance corresponding to ½ of the width of the first crystallizing block.

6. method of claim 5 , wherein the crystallization along the X-axis direction further includes moving the stage along the Y-axis direction a distance corresponding to the length of the first crystallizing block when the moving direction of the stage is changed along the X-axis.

7. The method of claim 3 , wherein the crystallization along the Y-axis direction further includes moving the stage along the X-axis direction a distance corresponding to the width of the second crystallizing block when the moving direction of the stage is changed along the Y-axis.