Disclosed is a semiconductor device having a driver circuit operable at high speed and a method for manufacturing same. An active matrix liquid crystal display device uses a polysilicon film for its TFT active layer constituting a pixel matrix circuit because of low off current characteristics. On the other hand, a TFT active layer constituting driver circuits and a signal processing circuit uses a poly silicon germanium film because of high speed operation characteristics.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for manufacturing a semiconductor device, comprising: forming a semiconductor film comprising silicon having a first region and a second region on an insulating film; adding germanium to said first region of said semiconductor film wherein said first region of said semiconductor film includes a Si 1-X Ge x film where 0<X<1 by adding germanium; adding a crystallization promoting material to said first and second regions of said semiconductor film; heating said first and second regions of said semiconductor film; and patterning said first and second regions of said semiconductor film after said heating step, wherein said first region of said semiconductor film includes a polycrystalline Si 1-X Ge X film where 0<X<1 by said heating step and said second region of said semiconductor film includes an amorphous semiconductor film after said heating step.
2. A method for forming a semiconductor device according to claim 1 , wherein said crystallization promoting material comprises an clement selected from the group consisting of nickel, cobalt, iron, copper, palladium, platinum, gold and indium.
3. A method for forming a semiconductor device according to claim 1 , wherein said heating step is carried out in a temperature range of from 550 to 650° C.
4. A semiconductor device according to claim 1 , wherein said first region of said semiconductor film includes nickel at a concentration of 1×10 15 to 1×10 16 atoms/cm 3 .
5. A method for forming a semiconductor device, forming an amorphous semiconductor film comprising silicon having a first region and a second region on an insulating film; adding germanium to said first region of said amorphous semiconductor film wherein said first region of said amorphous semiconductor film includes an amorphous Si 1-X Ge X film where 0<X<1 by adding germanium; adding a crystallization promoting material to said amorphous semiconductor film; and heating said amorphous semiconductor film, wherein said first region of said amorphous semiconductor film includes a polycrystalline Si 1-X Ge X film where 0<X<1 by said heating step and said second region of said amorphous semiconductor film remains as said amorphous semiconductor film after said heating step; further comprising a step of forming a first active layer and a second active layer by patterning said first region of said polycrystalline Si 1-X Ge X film where 0<X<1 and said second region of said amorphous semiconductor film; and wherein said first active layer is used in a driver circuit and said second active layer is used in a pixel portion.
6. A method for forming a semiconductor device according to claim 5 , wherein said crystallization promoting material comprises an element selected from the group consisting of nickel, cobalt, iron, copper, palladium, platinum, gold and indium.
7. A method for forming a semiconductor device according to claim 5 , wherein said heating step is carried out in a temperature range of from 550 to 650° C.
8. A semiconductor device according to claim 5 , wherein said first region of said semiconductor film includes nickel at a concentration of 1×10 15 to 1×10 16 atoms/cm 3 .
9. A method for forming a semiconductor device, forming an amorphous semiconductor film comprising silicon having a first region and a second region on an insulating film; adding germanium to said first region of said amorphous semiconductor film wherein said first region of said amorphous semiconductor film includes an amorphous Si 1-X Ge X film where 0<X <1 by adding germanium; adding a crystallization promoting material to said amorphous semiconductor film; and heating said amorphous semiconductor film, wherein said first region of said amorphous semiconductor film includes a polycrystalline Si 1-X Ge X film where 0<X<1 by said heating step and said second region of said amorphous semiconductor film remains as said amorphous semiconductor film after said heating step.
10. A method for forming a semiconductor device according to claim 9 , wherein said crystallization promoting material comprises an element selected from the group consisting of nickel, cobalt, iron, copper, palladium, platinum, gold and indium.
11. A method for forming a semiconductor device according to claim 9 , wherein said heating step is carried out in a temperature range of from 550 to 650° C.
12. A semiconductor device according to claim 9 , wherein said first region of said semiconductor film includes nickel at a concentration of 1×10 15 to 1×10 16 atoms/cm 3 .
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 12, 2006
March 16, 2010
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