A semiconductor device is manufactured by, first, providing a wafer, designated with a saw street guide, and having a bond pad formed on an active surface of the wafer. The wafer is taped with a dicing tape. The wafer is singulated along the saw street guide into a plurality of dies having a plurality of gaps between each of the plurality of dies. The dicing tape is stretched to expand the plurality of gaps to a predetermined distance. An organic material is deposited into each of the plurality of gaps. A top surface of the organic material is substantially coplanar with a top surface of a first die of the plurality of dies. A redistribution layer is patterned over a portion of the organic material. An under bump metallization (UBM) is deposited over the organic material in electrical communication, through the redistribution layer, with the bond pad.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of manufacturing a semiconductor device, comprising: providing a wafer, designated with a saw street guide, and having a bond pad formed on an active surface of the wafer; taping the wafer with a dicing tape; singulating the wafer along the saw street guide into a plurality of dies having a plurality of gaps between each of the plurality of dies; stretching the dicing tape to expand the plurality of gaps to a predetermined distance; depositing an organic material into each of the plurality of gaps, wherein a top surface of the organic material is substantially coplanar with a top surface of a first die of the plurality of dies; patterning a redistribution layer over a portion of the organic material; and depositing an under bump metallization (UBM) over the organic material in electrical communication, through the redistribution layer, with the bond pad.
2. The method of manufacture of claim 1 , further including forming a solder bump over the under bump metallization (UBM).
3. The method of manufacture of claim 2 , further including resingulating the wafer by cutting a portion of the organic material to render a plurality of extended dies.
4. The method of manufacture of claim 1 , wherein the organic material includes a benzocyclobutene (BCB), polyimide (PI), or acrylic resin material.
5. The method of manufacture of claim 1 , wherein the organic material is applied using a spin coating or needle dispensing process.
6. The method of manufacture of claim 1 , wherein stretching the dicing tape to expand the plurality of gaps to a predetermined distance is performed using an expansion table.
7. The method of manufacture of claim 3 , further including picking each of the plurality of extended dies from the dicing tape.
8. A method of manufacturing a semiconductor device, comprising: providing a wafer, designated with a saw street guide, and having a bond pad formed over an active surface of the wafer; taping the wafer with a first dicing tape; singulating the wafer along the saw street guide into a plurality of dies having a plurality of first gaps between each of the plurality of dies; picking the plurality of dies from the first dicing tape; placing the plurality of dies onto a first wafer support system to obtain a plurality of second gaps of a predetermined width between each of the plurality of dies; depositing an organic material into each of the plurality of gaps to render a recoated wafer, wherein a top surface of the organic material is substantially coplanar with a top surface of a first die of the plurality of dies; transferring the recoated wafer onto a second wafer support system; patterning a redistribution layer over a portion of the organic material; and depositing an under bump metallization (UBM) over the organic material in electrical communication, through the redistribution layer, with the bond pad.
9. The method of manufacture of claim 8 , further including forming a solder bump over the under bump metallization (UBM).
10. The method of manufacture of claim 9 , further including resingulating the wafer by cutting a portion of the organic material to render a plurality of extended dies.
11. The method of manufacture of claim 10 , further including picking each of the plurality of extended dies from the second wafer support system.
12. The method of manufacture of claim 8 , wherein the first wafer support system comprises a third dicing tape.
13. The method of manufacture of claim 8 , wherein the first or second wafer support systems include a glass, silicon, or ceramic substrate.
14. The method of manufacture of claim 8 , wherein the organic material includes a benzocyclobutene (BCB), polyimide (PI), or acrylic resin material.
15. The method of manufacture of claim 8 , wherein the organic material is applied using a spin coating or needle dispensing process.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
May 4, 2007
March 30, 2010
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