The manufacturing method includes forming a molecular film 16 of at least one kind of molecule on a part of a conductive film 13 by placing, on the conductive film 13, a solution 12 containing the one kind of molecule dissolved therein, with the one kind of molecule being selected from the group consisting of: a molecule expressed by Formula (1): CF3(CF2)n(CH2)mSH, where n indicates a natural number of 3 to 7 while m denotes a natural number of 8 to 18; and a molecule expressed by Formula (2): CF3(CF2)p(CH2)qSS(CH2)q′(CF2)p′CF3, where p and p′ each are a natural number of 3 to 7 independently while q and q′ each are a natural number of 8 to 18 independently. Subsequently, the conductive film 13 located in a part where the molecular film 16 has not been formed is removed by bringing the conductive film 13 into contact with an etchant for the conductive film 13. Thus, a conductive pattern 17 is formed.
Legal claims defining the scope of protection, as filed with the USPTO.
2. The method of manufacturing a conductive pattern according to claim 1 , wherein the conductive film includes at least one selected from the group consisting of gold, silver, copper, platinum, gallium arsenide, and indium phosphide.
3. The method of manufacturing a conductive pattern according to claim 1 , wherein the conductive film is formed on a resin substrate.
5. The method of manufacturing an electronic device according to claim 4 , wherein the conductive film includes at least one selected from the group consisting of gold, silver, copper, platinum, gallium arsenide, and indium phosphide.
6. The method of manufacturing an electronic device according to claim 4 , wherein the conductive film is formed on a resin substrate.
7. The method of manufacturing an electronic device according to claim 4 , wherein the electronic device is a field effect transistor and the conductive pattern comprises a source electrode and a drain electrode.
8. The method of manufacturing an electronic device according to claim 7 , further comprising, after the step (II), (III) forming an organic semiconductor film between the source electrode and the drain electrode by placing a solution between the source electrode and the drain electrode, the solution including an organic semiconductor material dissolved therein.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
October 14, 2005
April 27, 2010
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.