A process for reading data (including verifying during programming) from a selected non-volatile storage elements of a group (e.g., NAND string) of non-volatile storage elements includes maintaining an intermediate voltage as a control gate voltage for an unselected non-volatile storage element and subsequently changing the control gate voltage for the unselected non-volatile storage element from the intermediate voltage to a read enable voltage. The control gate voltage for the selected non-volatile storage element is raised from a standby voltage (which is different than the intermediate voltage) to a read compare voltage. While the control gate for the selected non-volatile storage element is at the read compare voltage and the control gate for the unselected non-volatile storage element is at the read enable voltage, the state of the selected non-volatile storage element is sensed to determine information about the data stored in the selected non-volatile storage element.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for using non-volatile storage, comprising: raising a control gate voltage for an unselected non-volatile storage element from an intermediate voltage to a read enable voltage; raising a control gate voltage for a selected non-volatile storage element from a standby voltage to a read voltage while raising said control gate voltage for said unselected non-volatile storage element from said intermediate voltage to said read enable voltage, said standby voltage is lower than said intermediate voltage; and sensing information about data stored in said selected non-volatile storage element in response to said read voltage.
2. A method according to claim 1 , wherein: a read process is associated with a setup phase, a data access phase and a recovery phase; said raising a control gate voltage for an unselected non-volatile storage element, said raising a control gate voltage for a selected non-volatile storage element and said sensing information are part of said data access phase; said method further comprises changing said control gate voltage for said unselected non-volatile storage element to said intermediate voltage during said setup phase and changing said control gate voltage for a selected non-volatile storage element to a standby voltage from said read voltage during said recovery phase.
3. A method according to claim 1 , further comprising: raising said control gate voltage for said unselected non-volatile storage element from said standby voltage to said intermediate voltage.
4. A method according to claim 1 , further comprising: raising said control gate voltage for said unselected non-volatile storage element from said standby voltage to said intermediate voltage while said control gate voltage for said selected non-volatile storage element is at said standby voltage.
5. A method according to claim 1 , wherein: said method includes programming said selected non-volatile storage element, including applying a boosting voltage as said control gate voltage for said unselected non-volatile storage element; said raising a control gate voltage for an unselected non-volatile storage element, said raising a control gate voltage for a selected non-volatile storage element and said sensing information are performed as part of a verify operation for said programming; and said method further includes transitioning from said programming to said verify operation by changing said control gate voltage for said unselected non-volatile storage element to said intermediate voltage for a period of time during which said control gate voltage for said selected non-volatile storage element is at said standby voltage.
6. A method according to claim 1 , wherein: said unselected non-volatile storage element and said selected non-volatile storage element are NAND flash memory devices.
7. A method according to claim 1 , wherein: said unselected non-volatile storage element and said selected non-volatile storage element are multi-state flash memory devices.
8. A method according to claim 1 , wherein: said intermediate voltage is a power supply voltage.
9. A method for using non-volatile storage, comprising: changing a set of one or more unselected word lines for a set of non-volatile storage elements to a first voltage level and holding said unselected word lines at said first voltage level for a first period of time; raising said set of unselected word lines from said first voltage level to a second voltage level and holding said unselected word lines at said second voltage level for a second period of time; raising a selected word line from a standby voltage to a read voltage level while raising said set of unselected word lines from said first voltage level to said second voltage level, wherein said standby voltage is lower than said first voltage level said selected word line is associated with a selected non-volatile storage element; and sensing information about data stored in said selected non-volatile storage element in response to said read voltage level.
10. A method according to claim 9 , wherein said raising a selected word line to a read voltage level while raising said set of unselected word lines from said first voltage level to said second voltage level includes raising said selected word line from a standby voltage to said read voltage level while raising said set of unselected word lines from said first voltage level to said second voltage level.
11. A method according to claim 10 , wherein said changing a set of one or more unselected word lines for a set of non-volatile storage elements to a first voltage level includes changing said set of unselected word lines to a power supply voltage level.
12. A method according to claim 11 , wherein said second voltage level is a read enable voltage level.
13. A method according to claim 9 , wherein: a read process is associated with a setup phase and a data access phase; said changing a set of one or more unselected word lines for a set of non-volatile storage elements to a first voltage level and holding said unselected word lines at said first voltage level for a first period of time is part of said setup phase; and said raising said set of unselected word lines from said first voltage level to a second voltage level and said raising a selected word line to a read voltage level while raising said set of unselected word lines from said first voltage level to said second voltage level are part of said data access phase.
14. A method according to claim 9 , wherein said changing a set of one or more unselected word lines for a set of non-volatile storage elements to a first voltage level and holding said unselected word lines at said first voltage level for a first period of time includes changing the set of one or more word lines from a standby voltage to said first voltage level while a voltage level for said selected word line is held at said standby voltage.
15. A method according to claim 9 , further comprising: programming said selected non-volatile storage element while said unselected word lines receive a boosting voltage and said selected word line receives a program voltage; said changing a set of one or more unselected word lines, said raising said set of unselected word lines from said first voltage level to a second voltage level, said raising a selected word line to a read voltage level while raising said set of unselected word lines from said first voltage level to said second voltage level, and said sensing information are performed as part of a verify operation for said programming; and transitioning from said programming to said verify operation by changing said unselected word lines from said boosting voltage to said first voltage level and changing said selected word line from said program voltage to a standby voltage that is lower than said first voltage level.
16. A method according to claim 9 , wherein said sensing information about data stored in said selected non-volatile storage element in response to said read voltage level includes: waiting for said selected word line to settle; pre-charging a bit line associated with said selected non-volatile storage element; providing a discharge path for said bit line; and determining whether said bit line discharges.
17. A method according to claim 16 , wherein: said first voltage level is a power supply voltage level; said set of non-volatile storage elements are arranged in NAND strings connected to said selected word line and said unselected word lines; one of said NAND strings is connected to said bit line and includes said selected non-volatile storage element; and said first selected non-volatile storage element is connected to said selected word line.
18. A method according to claim 16 , wherein: said steps of pre-charging and determining are part of a verify process.
19. A method according to claim 16 , wherein: said steps of pre-charging and determining are part of a read process.
20. A method according to claim 16 , further comprising: reporting data based on whether said bit line discharges.
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May 4, 2009
June 8, 2010
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