Method of fabricating a stacked die having a recess in a die BGA package

1. A method of fabricating a semiconductor device, comprising: mounting a second die in a recess within an inactive surface of a first die; and mounting a third die on the second die; wherein an overall thickness of the first die and the second die is less than each of the thicknesses of the first die and the second die combined.

2. The method of claim 1 , wherein the third die comprises a perimeter and a recessed edge along said perimeter, and bond pads on the second die are situated within said recessed edge portion along the perimeter of the third die.

3. The method of claim 2 , wherein the recessed edge portion has a height sufficient for clearance of bonding elements when attached to and extending from the bond pads of the second die.

4. The method of claim 2 , further comprising connecting the bond pads of the second die to terminal pads on a substrate.

5. The method of claim 1 , further comprising flip chip mounting the first die onto a substrate.

6. The method of claim 1 , wherein the second die is mounted on an adhesive element situated within the recess of the first die.

7. The method of claim 1 , further comprising encapsulating at least a portion of the device to form a package.

8. The method of claim 1 , wherein the third die defines planes that form a non-rectangular shape.

9. The method of claim 8 , wherein the recess is defined by five sides.

10. The method of claim 1 , wherein the third die defines an arch in a cross-section.

11. The method of claim 1 , wherein the third die defines a T-shape in a cross-section.

12. The method of claim 1 , wherein the third die defines a non-rectangular polyhedron shape.

13. A method of fabricating a semiconductor device, comprising: mounting a second die on a first die wherein the second die is at least partially received with a recess in an inactive surface of the first die and an overall thickness of the first die with the second die within said recess is less than each of the thicknesses of the first die and the second die combined; and mounting a third die on the second die.

14. A method of fabricating a semiconductor device, comprising: mounting a second die within a recess within a surface of a first die; removing a portion of a third die along a perimeter to form a recessed edge; and mounting the third die on the second die with bond pads of the second die situated within the recessed edge of the third die.

15. A method of fabricating a semiconductor device, comprising: removing a portion of an in an inactive surface of a first die to form a recess sized to receive a second die at least partially therein; mounting the second die within said recess of the first die, wherein the first and second dies each have a height, and the first die with the second die situated within said recess has an overall height less than the height of the first die and the height of the second die added together; and mounting a third die on the second die.

16. The method of claim 15 , further comprises removing a portion of the third die along a perimeter to form a recessed edge, wherein the third die is mounted on the second die with bond pads of the second die situated within the recessed edge of the third die.

17. A method of fabricating a semiconductor device, comprising: mounting a stacked die assembly onto a substrate, the die assembly comprising a second die mounted in a recess within an inactive surface of a first die, and a third die mounted on the second die, wherein an overall thickness of the first die and the second die within said recess is less than each of the thicknesses of the first die and the second die combined.

18. The method of claim 17 , wherein the first die is flip chip mounted onto the substrate.

19. A method of fabricating a semiconductor device, comprising: mounting a second die in a recess within an inactive surface of a first die, wherein an overall thickness of the first die and the second die is less than each of the thicknesses of the first die and the second die combined.

20. The method of claim 19 , wherein the recess is defined by at least two sides.

21. A method of fabricating a semiconductor device, comprising: mounting a second die on a first die wherein the second die is at least partially received within a recess within an inactive surface of the first die and an overall thickness of the first die with the second die within said recess is less than each of the thicknesses of the first die and the second die combined.

22. A method of fabricating a semiconductor device, comprising: mounting a stacked die assembly onto a substrate, the die assembly comprising a second die mounted in a recess within an inactive surface of a first die, wherein an overall thickness of the first die and the second die within said recess is less than each of the thicknesses of the first die and the second die combined.

23. A method of fabricating a semiconductor device, comprising: recessing a region of an inactive side of a first die; flip chip mounting an active side of the first die on a substrate; and mounting a second die within the recess of the first die, wherein an overall thickness of the first die and the second die within said recess is less than each of the thicknesses of the first die and the second die combined.

24. The method of claim 23 , wherein recessing the inactive side of the first die comprises removing a thickness from the inactive side of the first die to form a recess.

25. A method of fabricating a semiconductor device, comprising: mounting a second die in a recess within a surface of a first die; and mounting a third die on the second die; wherein the third die comprises a perimeter and a recessed edge along said perimeter, and bond pads on the second die are situated within said recessed edge portion along the perimeter of the third die; and an overall thickness of the first die and the second die is less than each of the thicknesses of the first die and the second die combined.