Methods of forming a microelectronic structure are described. Embodiments of those methods include forming an identification mark on a portion of a backside of an individual die of a wafer by utilizing laser assisted CVD, wherein the formation of the identification mark is localized to a focal spot of the laser.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of forming a microelectronic structure, comprising: forming an identification mark on a portion of a backside of an individual die of a wafer by utilizing laser assisted chemical vapor deposition, wherein the formation of the identification mark is localized to a focal spot of the laser, and wherein the identification mark comprises a metallic thin film comprising at least one of titanium, aluminum, titanium nitride and copper, and wherein a thickness of the metallic thin film comprises from about 10 nm to about 1 micron.
2. The method of claim 1 further comprising utilizing the identification mark for a unit level traceability process.
3. The method of claim 1 wherein a laser heating effect is localized to the focal spot of the laser, and wherein the laser temperature is below about 200 degrees Celsius.
4. The method of claim 1 wherein the metallic thin film can be formed along at least one pre-defined location on the backside of the individual die.
5. The method of claim 1 wherein the identification mark comprises a contrast region with a backside coating on the backside of the individual die.
6. The method of claim 1 further comprising wherein a set of scanning mirrors guides the laser beam across the backside of the wafer.
7. A method of forming a microelectronic structure, comprising: forming a thin metal film on a portion of a backside of an individual die of a wafer by utilizing laser assisted CVD, wherein the formation of the thin metal film is guided by the laser to form a unique identification mark on the individual die; and guiding the laser to form additional unique identification markings on additional individual die of the wafer.
8. The method of claim 7 further comprising wherein the unique identification mark does not comprise an ink marking and does not form a groove in the backside of the individual die.
9. The method of claim 7 further comprising wherein the unique identification mark is formed below about 200 degrees Celsius.
10. The method of claim 7 wherein the identification mark is formed on a wafer below about 700 microns in thickness.
11. The method of claim 7 wherein the unique marking comprises a thin metallic film that comprises a contrast region with a backside coating on the backside of the individual die.
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September 17, 2008
October 5, 2010
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