Test pattern of CMOS image sensor and method of measuring process management using the same

1. A method of measuring process management of the fabrication of a CMOS image sensor, comprising: forming a test pattern of a CMOS image sensor, wherein the test pattern comprises an opaque metal film pattern formed on a semiconductor substrate, an insulating film formed on the semiconductor substrate and the metal film pattern, a single-color filter formed on the insulating film, the single-color filter being only a red color filter, a planarization layer formed on the insulating film and the single-color filter, and a number of micro-lenses formed on the planarization layer; and scanning the test pattern at a plurality of angles using a light source of short wavelength, detecting a scattered beam, and measuring the process management of the micro-lenses and the color filter.

2. The method of claim 1 , wherein the light source of short wavelength is a helium (He)-neon (Ne) laser.

3. The method of claim 1 , wherein the angle is incident to the surface of the test pattern within the range of −47° to 47°.

4. The method of claim 1 , wherein the insulating film includes undoped silicate glass.

5. A method for forming a test pattern of a CMOS image sensor, comprising: forming an opaque metal film pattern on a semiconductor substrate; forming an insulating film on the semiconductor substrate and the metal film pattern; forming a single-color filter on the insulating film, the single-color filter being only a red color filter; forming a planarization layer on the insulating film and the single-color filter; and forming a plurality of micro-lenses on the planarization layer.

6. The method of claim 5 , wherein the metal film pattern is composed of aluminum or copper.

7. The method of claim 5 , wherein the insulating film includes undoped silicate glass.

8. The method of claim 5 , wherein the test pattern further comprises silicon nitride (SiN) between the insulating film and the single-color filter.