A semiconductor device is composed of: an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on an insulating film formed on a substrate; and a capacitor composed of a lower capacitor electrode made of the first conductive film, a dielectric film formed on the lower capacitor electrode, and an upper capacitor electrode made of the second conductive film and formed on the dielectric film.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device comprising: an insulating film; a lower insulating film formed beneath the insulating film; a lower interconnect formed on the lower insulating film; an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on the insulating film; the lower interconnect made of the first conductive film and the second conductive film that are stacked in sequence from the lower interconnect underside on the lower insulating film; on the insulating film, a capacitor composed of: a lower capacitor electrode made of the first conductive film; a dielectric film formed on the lower capacitor electrode; and an upper capacitor electrode made of the second conductive film and formed on the dielectric film, wherein each of the lower capacitor electrode, the dielectric film, and the upper capacitor electrode has a same pattern; lower contacts are formed in the insulating film on a bottom surface of the lower capacitor electrode, the lower contacts being connected to the lower capacitor electrode; and the lower contacts are connected to the lower interconnect.
2. The semiconductor device of claim 1 , wherein a thickness of the first conductive film is relatively smaller than that of the second conductive film.
3. The semiconductor device of claim 1 , wherein a surface of the insulating film on which the capacitor is formed is planarized.
4. The semiconductor device of claim 1 , wherein an upper insulating film is formed so as to cover the capacitor and the interconnect; and upper contacts are formed in the upper insulating film on an upper surface of the upper capacitor electrode, the upper contacts being connected to the upper capacitor electrode; an upper interconnect made of the first conductive film and the second conductive film that are stacked in sequence from the upper interconnect underside on the upper insulating film; and the upper contacts are connected with the upper interconnect.
5. The semiconductor device of claim 4 , wherein a thickness of the first conductive film is relatively smaller than that of the second conductive film.
6. The semiconductor device of claim 1 , wherein the first conductive film is made of a metal nitride.
7. The semiconductor device of claim 6 , wherein the dielectric film is SiN.
8. The semiconductor device of claim 7 , wherein the second conductive film is made of an aluminum alloy.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
August 4, 2008
October 5, 2010
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