Methods and systems for depositing nanomaterials onto a receiving substrate and optionally for depositing those materials in a desired orientation, that comprise providing nanomaterials on a transfer substrate and contacting the nanomaterials with an adherent material disposed upon a surface or portions of a surface of a receiving substrate. Orientation is optionally provided by moving the transfer and receiving substrates relative to each other during the transfer process.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method, comprising: forming a plurality of nanostructures on a transfer substrate; providing a receiving substrate which comprises one or more selected regions of an adherent material; mating the transfer substrate with the receiving substrate wherein the nanostructures adhere to the one or more selected regions during the mating step; and separating the transfer substrate from the receiving substrate to leave a population of nanostructures adhered to the receiving substrate.
2. The method of claim 1 , wherein the plurality of nanostructures comprises a plurality of nanofibers.
3. The method of claim 1 , wherein the plurality of nanofibers comprises a plurality of semiconductor nanowires.
4. The method of claim 3 , wherein the plurality of semiconductor nanowires comprise a semiconductor material selected from a Group II-VI semiconductor, a Group III-V semiconductor, or a Group IV semiconductor.
5. The method of claim 1 , wherein the plurality of nanowires comprise a plurality of silicon nanowires.
6. The method of claim 1 , wherein the nanostructures are synthesized on the transfer substrate.
7. The method of claim 6 , wherein the nanostructures are grown upon the transfer substrate using a vapor phase epitaxial growth process.
8. The method of claim 1 , wherein the mating step comprises pressing the transfer substrate to the receiving substrate.
9. The method of claim 1 , wherein the receiving substrate comprises a flexible planar sheet substrate.
10. The method of claim 1 , wherein the transfer substrate is disposed on a roll.
11. The method of claim 10 , wherein the roll of the transfer substrate is rolled over the receiving substrate.
12. The method of claim 1 , wherein between the mating step and the separating step, at least one of the transfer substrate and the receiving substrate are moved in a direction substantially parallel relative to the other of the transfer substrate and the receiving substrate, to substantially align the nanostructures on the receiving substrate.
13. The method of claim 1 , wherein following the separating step, the adherent material is removed from the surface of the receiving substrate.
14. The method of claim 13 , wherein the removing step comprises plasma cleaning of the receiving substrate.
15. The method of claim 14 , wherein the removing step comprises cleaning the surface of the receiving substrate with a solvent.
16. The method of claim 13 , wherein the adherent material comprises a photoresist, and the removing step comprises exposing the adherent material to light and contacting the adherent material with a developer solution.
17. The method of claim 1 , wherein at least some of the plurality of nanostructures on the transfer substrate are substantially perpendicular to the surface of the transfer substrate prior to contacting with the receiving substrate.
18. The method of claim 1 , wherein the transfer substrate comprises a semiconductor material.
19. The method of claim 1 , wherein the receiving substrate comprises a polymer.
20. The method of claim 1 , further comprising fabricating one or more transistors on the receiving substrate using at least a subset of the population of nanostructures as a channel region between one or more source contact and drain contact deposited on the receiving substrate.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
August 21, 2006
November 9, 2010
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.