A method for forming bonded substrates includes providing a plurality of substrates, each of which having a top surface. A characteristic length for each of the plurality of substrates is determined by: determining a topographical profile of the top surface of the substrate from an interior portion to an edge portion along a radial direction, determining a highest point of the profile, and defining the characteristic length as a distance from the highest point to the edge portion. A first substrate and a second substrate are selected where at least one of the first or the second substrates has a characteristic length shorter than a predetermined length. The first substrate and the second substrate are brought into contact and form bonded substrates, with the top surface of the first substrate facing the top surface of the second substrate.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for forming bonded substrates, the method comprising: providing a plurality of substrates, each of the plurality of substrates having a top surface; determining a characteristic length for each of the plurality of substrates by: determining a profile of the top surface of the substrate from an interior portion to an edge portion along a radial direction; determining a highest point of the profile the highest point being higher than the interior portion; and defining the characteristic length as a distance from the highest point to the edge portion; selecting a first substrate and a second substrate from the plurality of substrates, at least one of the first and the second substrates having a characteristic length shorter than a predetermined length; bringing the first substrate and the second substrate into contact, the top surface of the first substrate facing the top surface of the second substrate; and causing the first and the second substrates to form the bonded substrates.
2. The method of claim 1 wherein the profile of the top surface for each of the plurality of substrates is determined using a surface profiling apparatus.
3. The method of claim 1 wherein the profile of the top surface for each of the plurality of substrates is determined using an atomic force microscope.
4. The method of claim 1 wherein each of the plurality of substrates is a silicon wafer.
5. The method of claim 1 wherein the interior portion is near a center point of the substrate.
6. The method of claim 1 wherein the predetermined length is related to a length of non-bonded edge region.
7. The method of claim 1 wherein the predetermined length is about 1 mm.
8. The method of claim 1 wherein the highest point of the profile is from about 200 nm to about 800 nm above the interior portion.
9. The method of claim 1 wherein the characteristic length is in a range of about 1.5 mm to about 10 mm.
10. The method of claim 1 further comprising applying pressure or pressure and heat to the first and the second substrates.
11. A method for selecting a substrate for forming bonded substrates, the method comprising: providing a substrate, the substrate having a top surface, the top surface including an interior portion and an edge portion; determining a profile of the top surface from the interior portion to the edge portion along a radial direction; determining a highest point of the profile the highest point being higher than the interior portion; determining a length from the highest point to the edge portion; and selecting the substrate for bonding with a second substrate to form bonded substrates if the length is less than a predetermined length.
12. The method of claim 11 wherein the profile of the top surface of the substrates is determined using a surface profiling apparatus.
13. The method of claim 11 wherein the profile of the top surface of the substrate is determined using an atomic force microscope.
14. The method of claim 11 wherein the substrate is a silicon wafer.
15. The method of claim 11 wherein the predetermined length is related to a length of non-bonded edge region.
16. The method of claim 11 wherein the interior portion is near a center point of the substrate.
17. The method of claim 11 wherein the highest point of the profile is from about 200 nm to about 800 nm above the interior portion.
18. The method of claim 11 wherein the characteristic length is in a range of about 1.5 mm to about 10 mm.
19. A method for forming bonded substrates having non-bonded edge region shorter than a predetermined edge exclusion length, the method comprising: determining a target characteristic length based on the predetermined edge exclusion length; for each of a plurality of substrates determining a characteristic length by: determining a profile of the top surface of the substrate from an interior portion to an edge portion along a radial direction; determining a highest point of the profile the highest point being higher than the interior portion; and defining the characteristic length as a distance from the highest point to the edge portion; selecting a first substrate and a second substrate from the plurality of substrates, at least one of the first and the second substrates having a characteristic length shorter than the target characteristic length; and causing the first and the second substrates to form the bonded substrates.
20. The method of claim 19 wherein the each of the substrates is a silicon wafer.
21. The method of claim 19 wherein the target characteristic length is substantially equal to the predetermined edge exclusion length.
22. The method of claim 19 wherein the predetermined edge exclusion length is about 1 mm and the target characteristic length is repeatably in a range from about 1 mm to about 1.5 mm.
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February 4, 2008
December 7, 2010
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