The present invention describes a method of and an apparatus for providing a wafer, the wafer including Silicon; etching trenches in the wafer to form Silicon fins; filling Silicon Oxide in the trenches; planarizing the Silicon Oxide; recessing the Silicon Oxide to a first thickness to form exposed Silicon pedestals from the Silicon fins; depositing SiGe over the exposed Silicon pedestal; recessing the Silicon Oxide to a second thickness; undercutting the exposed Silicon pedestals to form necked-in Silicon pedestals; oxidizing thermally and annealing the SiGe; and forming Germanium nanowires.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A Germanium nanowire of comprising: a Germanium core; and a Silicon Oxide shell disposed around said Gemanium core; wherein the Germanium nanowire comprises a diameter of 30-45 nm.
2. A Germanium nanowire of comprising: a Germanium core; and a Silicon Oxide shell disposed around said Gemanium core; wherein the Germanium nanowire comprises a length of 7-10 um.
3. A Germanium nanowire of comprising: a Germanium core; and a Silicon Oxide shell disposed around said Gemanium core; wherein the Germanium nanowire comprises a Germanium content of 91-99%.
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December 30, 2008
December 14, 2010
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