Bonded wafer packages having first and second wafers bonded together forming a matrix of sealed devices, at least one of the wafers having a plurality of passive devices formed thereon, including at least one BAW resonator within each of the sealed devices, the first wafer having conductor filled through-holes forming electrical connections between the passive devices and connections assessable from outside the sealed devices, the bonded wafers being diced to form individual sealed devices. The devices may be duplexers, interstage filters or other circuits such as VCOs and RF circuits. Various embodiments are disclosed.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A bonded wafer package comprising: first and second wafers bonded together forming a matrix of sealed devices, at least one of the wafers having a plurality of passive devices formed thereon, including at least one BAW resonator within each of the sealed devices; the first wafer having conductor filled through-holes forming electrical connections between the passive devices and connections assessable from outside the sealed devices; the bonded wafers being diced to form individual sealed devices.
2. The bonded wafer package of claim 1 wherein one wafer is a silicon wafer and one wafer includes a piezoelectric film.
3. The bonded wafer of claim 2 wherein the silicon wafer includes a plurality of active devices thereon.
4. The bonded wafer of claim 3 wherein the active devices include transistors.
5. The bonded wafer package of claim 4 wherein the transistors comprise a multi-stage power amplifier whose individual gain stages connect to individual resonator stages to optimize system noise and filter loss.
6. The bonded wafer package of claim 4 wherein the transistors comprise at least one of a low noise amplifier and a power amplifier.
7. The bonded wafer package of claim 6 wherein the plurality of passive devices and the plurality active devices comprise a duplexer.
8. The bonded wafer package of claim 2 wherein the piezoelectric film is an AlN film.
9. The bonded wafer package of claim 8 wherein the plurality of passive devices include at least one capacitor.
10. The bonded wafer package of claim 9 wherein the at least one capacitor is on the AlN wafer, and comprises an insulator between two conductive plates, the insulator being an AlN insulator, thereby forming a BAW device tuned to not be resonant for frequencies of signals applied to the capacitor.
11. The bonded wafer package of claim 1 wherein both wafers have a plurality of passive devices formed thereon; and further comprising electrical contacts bonded between the first and second wafers to make electrical contact with passive devices on the second wafer.
12. The bonded wafer package of claim 1 further comprised of a third wafer bonded to the second wafer, the third wafer having active devices thereon, and further comprising electrical contacts bonded between the first and second wafers to make electrical contact with passive devices on the second wafer, and bonded between the second and third wafers to make electrical contact with passive devices on the third wafer.
13. The bonded wafer package of claim 12 wherein the third wafer is a silicon wafer having transistors thereon.
14. The bonded wafer package of claim 13 wherein the plurality of passive devices form a duplexer, inductors for the duplexer being formed by conductive traces on one surface of the bonded wafer package, and wherein the transistors form a low noise amplifier and a power amplifier.
15. The bonded wafer package of claim 14 wherein the transistors also form at least one of a: variable gain amplifier, upconverter, downconverter, power amplifier driver, and RF switch.
16. The bonded wafer package of claim 13 wherein the plurality of passive devices form a duplexer, inductors for the duplexer being formed by conductive traces on one surface of the bonded wafer package.
17. The bonded wafer package of claim 1 further comprising electrical contacts bonded between the first and second wafer to make electrical contact with devices on the second wafer.
18. The bonded wafer package of claim 17 further comprised of a third wafer bonded to the second wafer, one of the second and third wafers being a silicon wafer with low noise amplifier thereon and the other of the second and third wafers being a GaAs wafer with a power amplifier thereon, and further comprising electrical contacts bonded between the first and second wafers to make electrical contact with devices on the second wafer, and bonded between the second and third wafers to make electrical contact with devices on the third wafer.
19. The bonded wafer package of claim 1 wherein each of the BAW resonators face a cavity in the opposite wafer.
20. The bonded wafer package of claim 1 wherein at least one of the wafers has an active device formed therein, the passive devices and the active devices, together with at least one inductor formed by conductive traces on one surface of the bonded wafer package forming a voltage controlled oscillator circuit.
21. The bonded wafer package of claim 20 wherein the bonded wafer package comprises a plurality of voltage controlled oscillator circuits.
22. The bonded wafer package of claim 1 wherein one wafer is a wafer having active devices thereon and one wafer is a resonator wafer having BAW resonators thereon, and wherein the devices on the two wafers are interconnected to form a duplexer for coupling to an antenna, a transmit signal path including an up converter and power amplifier, and a receive signal path including a low noise amplifier and a down converter.
23. The bonded wafer package of claim 22 wherein each of the transmit and receive signal paths include a local oscillator resonator in a voltage controlled oscillator circuit.
24. The bonded wafer package of claim 23 wherein the transmit signal path further comprises a power amplifier driver and an interstage matching filter.
25. A bonded wafer package comprising: first and second wafers bonded together forming a matrix of sealed devices, at least one of the wafers having a plurality of passive devices thereon forming duplexers, including a plurality of BAW resonators within each of the sealed devices, inductors for the duplexers being formed by conductive traces on one surface of the bonded wafer package; the first wafer having conductor filled through-holes forming electrical connections between the passive devices and connections assessable from outside the sealed devices; the bonded wafers being diced to form individual sealed devices.
26. The bonded wafer package of claim 25 wherein one wafer is a silicon wafer and one wafer includes an AlN film.
27. The bonded wafer of claim 26 wherein the silicon wafer includes a plurality of active devices thereon.
28. The bonded wafer package of claim 27 wherein the transistors comprise a low noise amplifier and a power amplifier.
29. The bonded wafer package of claim 28 wherein the transistors also form at least one of: variable gain amplifier, upconverter, downconverter, power amplifier driver, and RF switch.
30. The bonded wafer package of claim 26 wherein capacitors in the duplexers are on the wafer that includes the AlN film, and comprises an insulator between two conductive plates, the insulator being an AlN insulator, forming a BAW device tuned to not be resonant for frequencies of signals applied to the capacitor.
31. The bonded wafer package of claim 25 wherein both wafers have a plurality of passive devices formed thereon; and further comprising electrical contacts bonded between the first and second wafers to make electrical contact with passive devices on the second wafer.
32. The bonded wafer package of claim 25 further comprised of a third wafer bonded to the second wafer, the third wafer having active devices thereon, and further comprising electrical contacts bonded between the first and second wafers to make electrical contact with passive devices on the second wafer, and bonded between the second and third wafers to make electrical contact with passive devices on the third wafer.
33. The bonded wafer package of claim 32 wherein the third wafer is a silicon wafer having transistors thereon.
34. The bonded wafer package of claim 33 wherein the transistors form a low noise amplifier and a power amplifier.
35. The bonded wafer package of claim 33 herein wherein the transistors also form at least one of: variable gain amplifier, upconverter, downconverter, power amplifier driver, and RF switch.
36. The bonded wafer package of claim 25 further comprising electrical contacts bonded between the first and second wafers to make electrical contact with devices on the second wafer.
37. The bonded wafer package of claim 36 further comprised of a third wafer bonded to the second wafer, one of the second and third wafers being a silicon wafer with low noise amplifier thereon and the other of the second and third wafers being a GaAs wafer with a power amplifier thereon, and further comprising electrical contacts bonded between the first and second wafers to make electrical contact with devices on the second wafer, and bonded between the second and third wafers to make electrical contact with devices on the third wafer.
38. The bonded wafer package of claim 25 wherein each of the BAW resonators face a cavity in the opposite wafer.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
May 21, 2008
January 4, 2011
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