A dense boron-based or phosphorus-based dielectric material is provided. Specifically, the present invention provides a dense boron-based dielectric material comprised of boron and at least one of carbon, nitrogen, and hydrogen or a dense phosphorus-based dielectric comprised of phosphorus and nitrogen. The present invention also provides electronic structures containing the dense boron-based or phosphorus-based dielectric as an etch stop, a dielectric Cu capping material, a CMP stop layer, and/or a reactive ion etching mask in a ULSI back-end-of-the-line (BEOL) interconnect structure. A method of forming the inventive boron-based or phosphorus-based dielectric as well as the electronic structure containing the same are also described in the present invention.
Legal claims defining the scope of protection, as filed with the USPTO.
1. An electronic structure having layers of insulating material as intralevel or interlevel dielectrics in a wiring structure comprising: a preprocessed semiconducting substrate; an interlayer or intralayer dielectric (ILD) located atop substrate, said ILD including at least one conductive feature embedded therein; and a dense dielectric comprising either (i) boron and at least one of carbon, nitrogen and hydrogen or (ii) phosphorus and nitrogen, wherein said dense dielectric and said ILD are in intimate contact and top surfaces of said ILD and said at least one conductive feature are essentially coplanar, and wherein said dense dielectric is amorphous and non-porous.
2. The electronic structure of claim 1 wherein said dense dielectric comprises boron and further at least one of Si, F, P and Ge.
3. The electronic structure of claim 2 wherein said dense dielectric comprises B x C y R z or B x N y R z wherein x, y and z are integers that represent a range of each component and R is a substituent selected from the group consisting of halogens, hydrogen, alkyl, aryl, alkoxy, amino and substituted amino.
4. The electronic structure of claim 1 wherein said dense dielectric has a density from about 0.9 to about 2.0 grams/cm 3 .
5. The electronic structure of claim 1 wherein said dense dielectric is a dielectric diffusion barrier layer to cap a conductive material located in a conductive feature below said dense dielectric.
6. The electronic structure of claim 5 wherein said dense dielectric is a single layer.
7. The electronic structure of claim 5 wherein said dense dielectric is a top layer of a bilayer structure.
8. The electronic structure of claim 1 wherein said dense dielectric is a buried etch stop layer located at the bottom of a conductive line located within said ILD.
9. The electronic structure of claim 1 wherein said dense dielectric is a chemical mechanical polish stop layer, wherein an upper surface of said dense dielectric is essentially coplanar with an upper surface of said conductive material.
10. The electric structure of claim 1 wherein said dense dielectric comprises phosphorus and optionally at least one of hydrogen, nitrogen, silicon, germanium and fluorine.
11. A boron-based dielectric material comprising boron and at least one of C, N, and H, wherein said boron is present in an amount from about 5 to about 90 atomic percent, and said dielectric material is amorphous, non-porous and has a density from about 0.9 to about 2.0 gm/cm 3 .
12. The boron-based dielectric material of claim 11 wherein C is present in an amount from about 5 to about 50 atomic percent.
13. The boron-based dielectric material of claim 11 wherein N is present in an amount from about 5 to about 50 atomic percent.
14. The boron-based dielectric material of claim 11 wherein H is present in an amount from about 20 to about 60 atomic percent.
15. The boron-based dielectric material of claim 11 further comprising at least one of Si, F, P and Ge.
16. A phosphorus-nitrogen-based dielectric material comprising P and N and optionally at least one of hydrogen, silicon, germanium and fluorine, said dielectric material is amorphous, non-porous, has a density from about 0.9 to about 2.0gm/cm 3 , a phosphorus content from about 3 to about 50 atomic percent and a nitrogen content from about 3 to about 50 atomic percent.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
July 25, 2008
January 4, 2011
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