A semiconductor device includes a first light emitting chip, the first light emitting chip having a first semiconductor layer, a second semiconductor layer, and a first active layer disposed therebetween, a second light emitting chip disposed on the first light emitting chip, the second light emitting chip having a third semiconductor layer, a fourth semiconductor layer, and a second active layer disposed therebetween, and a conductive layer disposed between the first semiconductor layer and the fourth semiconductor layer, the first semiconductor layer and the fourth semiconductor layer having different conductivity types.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device comprising: a first light emitting chip, the first light emitting chip having a first semiconductor layer, a second semiconductor layer, and a first active layer disposed therebetween; a second light emitting chip disposed on the first light emitting chip, the second light emitting chip having a third semiconductor layer, a fourth semiconductor layer, and a second active layer disposed therebetween; and a conductive layer disposed between the first semiconductor layer and the fourth semiconductor layer, the first semiconductor layer and the fourth semiconductor layer having different conductivity types.
2. The semiconductor device of claim 1 , further comprising a first electrode disposed on the conductive layer, a second electrode disposed on the third semiconductor layer, and a third electrode disposed on the second semiconductor layer.
3. The semiconductor device of claim 2 , wherein the second electrode and the third electrode are electrically connected.
4. The semiconductor device of claim 1 , wherein the second semiconductor layer is disposed on a substrate.
5. The semiconductor device of claim 4 , wherein the substrate comprising at least one of a semiconductor material or a conductive material.
6. The semiconductor device of claim 1 , wherein the conductive layer is transparent.
7. The semiconductor device of claim 1 , wherein the conductive layer is reflective.
8. The semiconductor device of claim 2 , wherein the third electrode is reflective.
9. The semiconductor device of claim 8 , wherein the third electrode includes a reflective side wall.
10. The semiconductor device of claim 7 , wherein the third electrode is flat.
11. The semiconductor device of claim 1 , further comprising vias disposed between the fourth semiconductor layer and the conductive layer.
12. The semiconductor device of claim 1 , wherein the second light emitting chip is a vertical type emitting chip.
13. The semiconductor device of claim 1 , further comprising a third light emitting chip including a fifth semiconductor layer, the fifth semiconductor layer disposed on the third semiconductor layer, the fifth semiconductor layer and the third semiconductor layer having different conductive types.
14. The semiconductor device of claim 1 , further comprising a third light emitting chip including a fifth semiconductor layer, the fifth semiconductor layer disposed on the third semiconductor layer, the fifth semiconductor layer and the third semiconductor layer having the same conductive type.
15. The semiconductor device of claim 1 , wherein the first and second light emitting chips configured to be alternately energized on respective alternating halves of an AC waveform to emit light.
16. The semiconductor device of claim 1 , wherein a contour of the first light emitting chip overlapping the second light emitting chip is substantially the same as a contour of the second light emitting chip.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
May 1, 2009
July 12, 2011
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