Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The method includes forming an upper wiring layer in a dielectric layer and depositing one or more dielectric layers on the upper wiring layer. The method further includes forming a plurality of discrete trenches in the one or more dielectric layers extending to the upper wiring layer. The method further includes depositing a ball limiting metallurgy or under bump metallurgy in the plurality of discrete trenches to form discrete metal islands in contact with the upper wring layer. A solder bump is formed in electrical connection to the plurality of the discrete metal islands.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of manufacturing a semiconductor structure, comprising: forming a plurality of discrete trenches in a dielectric layer; depositing an upper wiring layer material in the plurality of discrete trenches to form discrete upper wiring layer islands of an upper wiring layer in the dielectric layer; depositing one or more dielectric layers on the discrete upper wiring layer islands of the upper wiring layer; forming a plurality of discrete vias in the one or more dielectric layers, the plurality of discrete vias extending to the upper wiring layer; depositing a ball limiting metallurgy or under bump metallurgy in the plurality of discrete vias to form discrete metal islands in contact with the upper wiring layer; and forming a solder bump in electrical connection to the plurality of the discrete metal islands.
2. The method of claim 1 , further comprising forming metal layers between the solder bump and the plurality of discrete metal islands.
3. The method of claim 2 , wherein the metal layers include a capture pad and a conductive pad.
4. The method of claim 3 , wherein the capture pad is deposited over the conductive pad and includes a nickel material sandwiched between an upper gold layer and a bottom barrier layer.
5. The method of claim 1 , wherein the bump metallurgy or ball limiting metallurgy includes a refractory metal base layer, a conductive metal interlayer and a diffusion barrier top-layer.
6. The method of claim 1 , wherein the solder bump is a lead free solder bump.
7. The method of claim 1 , wherein the forming of the plurality of discrete vias includes etching openings of various sizes and shapes in the one or more dielectric layers.
8. The method of claim 1 , wherein the one or more dielectric layers is two dielectric layers.
9. The method of claim 1 , wherein the discrete metal islands contact the discrete upper wiring layer islands.
10. A method of manufacturing a package, comprising: forming a plurality of discrete trenches in a lower dielectric layer; filling the plurality of discrete trenches with conductive material which contacts an underlying metal line, to form a metal layer; forming a plurality of discrete vias in one or more dielectric layers, the plurality of discrete vias extending to the plurality of discrete trenches filled with the conductive material of the underlying metal layer; depositing a metal material in the discrete vias which form islands of under bump metallurgy or ball limiting metallurgy in contact with the underlying metal layer; depositing a lead free solder bump in electrical connection to the islands; and bonding a laminate structure to the lead free solder bump.
11. The method of claim 10 , further comprising forming a capture pad and a conductive pad between the solder bump and the islands.
12. The method of claim 10 , wherein the forming of the plurality of discrete vias includes forming openings of various sizes and shapes in the one or more dielectric layers.
13. The method of claim 10 , wherein the plurality of discrete trenches filled with the conductive material contacts the islands.
14. A solder bump structure, comprising: a plurality of discrete trenches filled with a conductive material formed in a lower dielectric layer; a plurality of metal islands of under bump metallurgy or ball limiting metallurgy formed in one or more dielectric layers and in contact with an upper wiring layer comprising the plurality of discrete trenches filled with the conductive material in the lower dielectric layer; and a solder bump in electrical connection with the metal islands.
15. The structure of claim 14 , further comprising a laminate bonded to the solder bump, wherein the solder bump is a lead free solder bump.
16. The structure of claim 14 , wherein the metal islands are composed of TaN or TiW.
17. The structure of claim 14 , wherein the plurality of discrete trenches filled with the conductive material formed in the lower dielectric layer are aligned and in electrical contact with the metal islands.
18. The structure of claim 16 , wherein the conductive material is a diffusion barrier layer and copper.
19. The structure of claim 14 , wherein the metal islands are of various sizes and shapes.
20. The method of claim 9 , wherein: the discrete metal islands are aligned with the discrete upper wiring layer islands; the upper wiring layer material in each respective discrete trench contacts the ball limiting metallurgy or under bump metallurgy in each respectively aligned discrete via; the upper wiring layer material comprises a metal liner comprising a tantalum nitride material, and copper; the method further comprises depositing a metal material of the ball limiting metallurgy or under bump metallurgy in the plurality of discrete vias, the metal material completely filling the plurality of discrete vias and comprising one of tantalum nitride or titanium tungsten; and the discrete upper wiring layer islands contact an underlying metal line comprising a metal layer formed in a dielectric material.
21. The method of claim 13 , wherein: the plurality of discrete vias are aligned with the plurality of discrete trenches filled with the conductive material; the conductive material in each respective discrete trench contacts the metal material in each respectively aligned discrete via; the conductive material comprises a metal liner comprising a tantalum nitride material, and copper; the metal material comprises a single metal material of the ball limiting metallurgy or under bump metallurgy, the single metal material completely filling the plurality of discrete vias and comprising one of tantalum nitride or titanium tungsten; and the underlying metal line comprises a lower metal layer formed in a dielectric material.
22. The structure of claim 17 , wherein: the conductive material in each respective discrete trench contacts the under bump metallurgy or ball limiting metallurgy in each respectively aligned metal island; the conductive material comprises a metal liner comprising a tantalum nitride material, and copper; the plurality of metal islands are completely filled with a metal material of the ball limiting metallurgy or under bump metallurgy, the metal material comprising one of tantalum nitride or titanium tungsten; and the structure further comprises a metal line comprising a metal layer formed in a dielectric material, the plurality of discrete trenches filled with the conductive material contacting the metal line.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
December 29, 2008
July 26, 2011
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