One of methods of manufacturing a semiconductor device of the present invention is as follows: a first conductive layer is formed, a first insulating layer is formed over the first conductive layer, and a second insulating layer is formed over the first insulating layer; then, a first opening portion is formed in the first insulating layer and the second insulating layer to reach the first conductive layer; a mask layer having low wettability to a composition containing a conductive material is formed over the second insulating layer, and a second opening portion larger than the first opening portion is formed in the second insulating layer; subsequently, the first and second opening portions are filled with the composition containing a conductive material to form a second conductive layer.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of manufacturing a semiconductor device, comprising: forming a conductive layer over a substrate; forming a first insulating layer over the conductive layer; forming a second insulating layer over the first insulating layer; forming a first mask layer having a first opening portion over the second insulating layer; forming a second opening portion reaching the conductive layer in the first insulating layer and the second insulating layer by etching the first insulating layer and the second insulating layer by use of the first mask layer; removing the first mask layer; forming a second mask layer over the second insulating layer after removing the first mask layer, the second mask layer having a third opening portion having a larger area than the second opening portion and having a surface with lower wettability than the second insulating layer with respect to a liquid composition containing a conductive material; forming a fourth opening portion in the second insulating layer, the fourth opening portion having a larger area than the second opening portion and overlapping with the second opening portion by etching the second insulating layer by use of the second mask layer; discharging the liquid composition containing the conductive material in the second and fourth opening portions by use of the second mask layer; and removing the second mask layer after discharging the liquid composition containing the conductive material in the second and fourth opening portions.
2. A method of manufacturing a semiconductor device according to claim 1 , wherein the second mask layer comprises a substance containing a fluorocarbon group.
3. A method of manufacturing a semiconductor device according to claim 1 , further comprising forming a wiring layer by drying the liquid composition containing the conductive material.
4. A method of manufacturing a semiconductor device according to claim 3 , wherein the drying the liquid composition is heat treatments, which is performed at a temperature 100° C. to 800° C.
5. A method of manufacturing a semiconductor device according to claim 1 , wherein wettability of the surface of the second mask layer with respect to the liquid composition containing a conductive material is lowered by performing a plasma treatment on the surface of the second mask layer.
6. A method of manufacturing a semiconductor device according to claim 5 , wherein the plasma treatment is performed in a gas atmosphere including fluorine.
7. A method of manufacturing a semiconductor device, comprising: forming a conductive layer over a substrate; forming a first insulating layer over the conductive layer; forming a second insulating layer having a pore over the first insulating layer; forming a first mask layer having a first opening portion over the second insulating layer; forming a second opening portion reaching the conductive layer in the first insulating layer and the second insulating layer by etching the first insulating layer and the second insulating layer by use of the first mask layer; removing the first mask layer; forming a second mask layer over the second insulating layer after removing the first mask layer, the second mask layer having a third opening portion having a larger area than the second opening portion and having a surface with lower wettability than the second insulating layer with respect to a liquid composition containing a conductive material; forming a fourth opening portion in the second insulating layer, the fourth opening portion having a larger area than the second opening portion and overlapping with the second opening portion by etching the second insulating layer by use of the second mask layer; discharging the liquid composition containing the conductive material in the second and fourth opening portions and the pore in the second insulating layer by use of the second mask layer; and removing the second mask layer after discharging the liquid composition containing the conductive material in the second and fourth opening portions and the pore in the second insulating layer.
8. A method of manufacturing a semiconductor device according to claim 7 , wherein the second mask layer comprises a substance containing a fluorocarbon group.
9. A method of manufacturing a semiconductor device according to claim 7 , further comprising forming a wiring layer by drying the liquid composition containing the conductive material.
10. A method of manufacturing a semiconductor device according to claim 9 , wherein the drying the liquid composition is heat treatments, which is performed at a temperature 100° C. to 800° C.
11. A method of manufacturing a semiconductor device according to claim 7 , wherein wettability of the surface of the second mask layer with respect to the liquid composition containing a conductive material is lowered by performing a plasma treatment on the surface of the second mask layer.
12. A method of manufacturing a semiconductor device according to claim 11 , wherein the plasma treatment is performed in a gas atmosphere including fluorine.
13. A method of manufacturing a semiconductor device, comprising: forming a conductive layer over a substrate; forming a first insulating layer over the first conductive layer; forming a second insulating layer over the first insulating layer; forming a third insulating layer over the second insulating layer; forming a first mask layer having a first opening portion over the third insulating layer; forming a second opening portion reaching the conductive layer in the first, second and third insulating layers by etching the first, second, and third insulating layers by use of the first mask layer; forming a second mask layer over the third insulating layer after removing the first mask layer, the second mask layer having a third opening portion having a larger area than the second opening portion and having a surface with lower wettability than the third insulating layer with respect to a liquid composition containing a conductive material; forming a fourth opening portion in the third insulating layer, the fourth opening portion having a larger area than the second opening portion and overlapping with the second opening portion by etching the third insulating layer to expose a part of an upper surface of the second insulating layer by use of the second mask layer; discharging the liquid composition containing the conductive material in the second and fourth opening portions by use of the second mask layer; and removing the second mask layer after discharging the liquid composition containing the conductive material in the second and fourth opening portions.
14. A method of manufacturing a semiconductor device according to claim 13 , wherein the second mask layer comprises a substance containing a fluorocarbon group.
15. A method of manufacturing a semiconductor device according to claim 13 , further comprising forming a wiring layer by drying the liquid composition containing the conductive material.
16. A method of manufacturing a semiconductor device according to claim 15 , wherein the drying the liquid composition is heat treatments, which is performed at a temperature 100° C. to 800° C.
17. A method of manufacturing a semiconductor device according to claim 13 , wherein wettability of the surface of the second mask layer with respect to the liquid composition containing a conductive material is lowered by performing a plasma treatment on the surface of the second mask layer.
18. A method of manufacturing a semiconductor device according to claim 17 , wherein the plasma treatment is performed in a gas atmosphere including fluorine.
19. A method of manufacturing a semiconductor device, comprising: forming a conductive layer over a substrate; forming a first insulating layer over the conductive layer; forming a second insulating layer over the first insulating layer; forming a third insulating layer having a pore over the second insulating layer; forming a first mask layer having a first opening portion over the third insulating layer; forming a second opening portion reaching the conductive layer in the first, second and third insulating layers by etching the first, second, and third insulating layers by use of the first mask layer; forming a second mask layer over the third insulating layer after removing the first mask layer, the second mask layer having a third opening portion having a larger area than the second opening portion and having a surface with lower wettability than the third insulating layer with respect to a liquid composition containing a conductive material; forming a fourth opening portion in the third insulating layer, the fourth opening portion having a larger area than the second opening portion and overlapping with the second opening portion by etching the third insulating layer to expose a part of an upper surface of the second insulating layer by use of the second mask layer; discharging the liquid composition containing the conductive material in the second and fourth opening portions and the pore in the third insulating layer by use of the second mask layer; and removing the second mask layer after discharging the liquid composition containing the conductive material in the second and fourth opening portions and the pore in the third insulating layer.
20. A method of manufacturing a semiconductor device according to claim 19 , wherein the second mask layer comprises a substance containing a fluorocarbon group.
21. A method of manufacturing a semiconductor device according to claim 19 , further comprising forming a wiring layer by drying the liquid composition containing the conductive material.
22. A method of manufacturing a semiconductor device according to claim 21 , wherein the drying the liquid composition is heat treatments, which is performed at a temperature 100° C. to 800° C.
23. A method of manufacturing a semiconductor device according to claim 19 , wherein wettability of the surface of the second mask layer with respect to the liquid composition containing a conductive material is lowered by performing a plasma treatment on the surface of the second mask layer.
24. A method of manufacturing a semiconductor device according to claim 23 , wherein the plasma treatment is performed in a gas atmosphere including fluorine.
25. A method for manufacturing a semiconductor device comprising: forming a conductive layer over a substrate; forming an insulating layer over the conductive layer; forming a mask layer having a first opening portion and a surface with lower wettability than the insulating layer with respect to a liquid composition containing a conductive material; forming a second opening portion reaching the conductive layer in the insulating layer by use of the mask layer; discharging the liquid composition containing the conductive material in the second opening portion by use of the mask layer; and removing the mask layer after discharging the liquid composition containing the conductive material in the second opening portion.
26. A method of manufacturing a semiconductor device according to claim 25 , wherein the mask layer comprises a substance containing a fluorocarbon group.
27. A method of manufacturing a semiconductor device according to claim 25 , further comprising forming a wiring layer by drying the liquid composition containing the conductive material.
28. A method of manufacturing a semiconductor device according to claim 27 , wherein the drying the liquid composition is heat treatments, which is performed at a temperature 100° C. to 800° C.
29. A method of manufacturing a semiconductor device according to claim 25 , wherein wettability of the surface of the mask layer with respect to the liquid composition containing a conductive material is lowered by performing a plasma treatment on the surface of the mask layer.
30. A method of manufacturing a semiconductor device according to claim 29 , wherein the plasma treatment is performed in a gas atmosphere including fluorine.
31. A method of manufacturing a semiconductor device, comprising: forming a conductive layer over a substrate; forming a first insulating layer over the conductive layer; forming a second insulating layer over the first insulating layer; forming a first mask layer having a first opening portion over the second insulating layer; forming a second opening portion reaching the conductive layer in the first insulating layer and the second insulating layer by etching the first insulating layer and the second insulating layer by use of the first mask layer; removing the first mask layer; forming a second mask layer over the second insulating layer after removing the first mask layer, the second mask layer having a third opening portion having a larger area than the second opening portion and having a surface with lower wettability than the second insulating layer with respect to a liquid composition containing a conductive material; forming a fourth opening portion in the second insulating layer, the fourth opening portion having a larger area than the second opening portion and overlapping with the second opening portion by etching the second insulating layer by use of the second mask layer; and discharging the liquid composition containing the conductive material in the second and fourth opening portions by use of the second mask layer, wherein the second mask layer comprises a substance containing a fluorocarbon group.
32. A method of manufacturing a semiconductor device according to claim 31 , further comprising forming a wiring layer by drying the liquid composition containing the conductive material.
33. A method of manufacturing a semiconductor device according to claim 32 , wherein the drying the liquid composition is heat treatments, which is performed at a temperature 100° C. to 800° C.
34. A method of manufacturing a semiconductor device, comprising: forming a conductive layer over a substrate; forming a first insulating layer over the first conductive layer; forming a second insulating layer over the first insulating layer; forming a third insulating layer over the second insulating layer; forming a first mask layer having a first opening portion over the third insulating layer; forming a second opening portion reaching the conductive layer in the first, second and third insulating layers by etching the first, second, and third insulating layers by use of the first mask layer; forming a second mask layer over the third insulating layer after removing the first mask layer, the second mask layer having a third opening portion having a larger area than the second opening portion and having a surface with lower wettability than the third insulating layer with respect to a liquid composition containing a conductive material; forming a fourth opening portion in the third insulating layer, the fourth opening portion having a larger area than the second opening portion and overlapping with the second opening portion by etching the third insulating layer to expose a part of an upper surface of the second insulating layer by use of the second mask layer; and discharging the liquid composition containing the conductive material in the second and fourth opening portions by use of the second mask layer, wherein the second mask layer comprises a substance containing a fluorocarbon group.
35. A method of manufacturing a semiconductor device according to claim 34 , further comprising forming a wiring layer by drying the liquid composition containing the conductive material.
36. A method of manufacturing a semiconductor device according to claim 35 , wherein the drying the liquid composition is heat treatments, which is performed at a temperature 100° C. to 800° C.
37. A method for manufacturing a semiconductor device comprising: forming a conductive layer over a substrate; forming an insulating layer over the conductive layer; forming a mask layer having a first opening portion and a surface with lower wettability than the insulating layer with respect to a liquid composition containing a conductive material; forming a second opening portion reaching the conductive layer in the insulating layer by use of the mask layer; and discharging the liquid composition containing the conductive material in the second opening portion by use of the mask layer, wherein the mask layer comprises a substance containing a fluorocarbon group.
38. A method of manufacturing a semiconductor device according to claim 37 , further comprising forming a wiring layer by drying the liquid composition containing the conductive material.
39. A method of manufacturing a semiconductor device according to claim 38 , wherein the drying the liquid composition is heat treatments, which is performed at a temperature 100° C. to 800° C.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
November 22, 2005
July 26, 2011
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